Abstract:Highly correlated orbitals coupled with phonons in two-dimension are identified for paramagnetic and optically active boron vacancy in hexagonal boron nitride by first principles methods which are responsible for recently observed optically detected magnetic resonance signal. We report ab initio analysis of the correlated electronic structure of this center by density matrix renormalization group and Kohn-Sham density functional theory methods. By establishing the nature of the bright and dark states as well a… Show more
“…We employ the CAM-B3LYP density functional [32][33][34] for this purpose, this calibrated, rangecorrected hybrid density functional being an example of an entrylevel method for the prediction of the spectroscopy of defects in molecular solids 24 . State energies reported by Ivády et al 31 are of the same order of magnitude as the present results, but some differ in basic nature to key ones identified herein. Firstprinciples-based approaches analogous to theirs are available that may prove useful for modelling defect spectroscopy [35][36][37][38][39] , but are not applied herein.…”
supporting
confidence: 71%
“…Calculations pertaining to the Gottscholl et al 16 ODMR observations have become available recently in the literature 31 . This also uses DFT to predict magnetic properties of bulk V À B defects, a critical novel conclusion being that strain-induced distortions away from full three-fold symmetry can interpret the observed off-axis ZFS parameter of E = 50 MHz.…”
The chemical and structural nature of defects responsible for quantum emission in hexagonal boron nitride (h-BN) remain unknown. Optically detected magnetic resonance (ODMR) measured from these defects was reported in two recent papers. In one case, the ODMR was tentatively attributed to the negatively charged boron vacancy, V À B. Here we show how the key optical and magnetic properties vary with location within the bulk and along edges of h-BN sheets for this and the negatively charged nitrogen vacancy, V À N. Sign changes of the axial zero-field interaction parameter D are predicted, as well interchange of singlet and triplet ground states. Based on the latest experimental information, we assign the observed ODMR signal to bulk V À B. The other observed ODMR has some features reminiscent of our calculations for V À N edge defects.
“…We employ the CAM-B3LYP density functional [32][33][34] for this purpose, this calibrated, rangecorrected hybrid density functional being an example of an entrylevel method for the prediction of the spectroscopy of defects in molecular solids 24 . State energies reported by Ivády et al 31 are of the same order of magnitude as the present results, but some differ in basic nature to key ones identified herein. Firstprinciples-based approaches analogous to theirs are available that may prove useful for modelling defect spectroscopy [35][36][37][38][39] , but are not applied herein.…”
supporting
confidence: 71%
“…Calculations pertaining to the Gottscholl et al 16 ODMR observations have become available recently in the literature 31 . This also uses DFT to predict magnetic properties of bulk V À B defects, a critical novel conclusion being that strain-induced distortions away from full three-fold symmetry can interpret the observed off-axis ZFS parameter of E = 50 MHz.…”
The chemical and structural nature of defects responsible for quantum emission in hexagonal boron nitride (h-BN) remain unknown. Optically detected magnetic resonance (ODMR) measured from these defects was reported in two recent papers. In one case, the ODMR was tentatively attributed to the negatively charged boron vacancy, V À B. Here we show how the key optical and magnetic properties vary with location within the bulk and along edges of h-BN sheets for this and the negatively charged nitrogen vacancy, V À N. Sign changes of the axial zero-field interaction parameter D are predicted, as well interchange of singlet and triplet ground states. Based on the latest experimental information, we assign the observed ODMR signal to bulk V À B. The other observed ODMR has some features reminiscent of our calculations for V À N edge defects.
“…This means that the ground state of 2 B 2 is a static PJT system, and the ground state indeed exhibits low C s symmetry. We note here that strong electron-phonon interaction with membrane phonons play an important role in the activation of intersystem crossing process in boron-vacancy optically detected magnetic resonance center 49 . This type of phonon modes can be found only in 2D solid-state systems.…”
We study the effect of strain on the physical properties of the nitrogen antisite-vacancy pair in hexagonal boron nitride (h-BN), a color center that may be employed as a quantum bit in a two-dimensional material. With group theory and ab initio analysis we show that strong electron–phonon coupling plays a key role in the optical activation of this color center. We find a giant shift on the zero-phonon-line (ZPL) emission of the nitrogen antisite-vacancy pair defect upon applying strain that is typical of h-BN samples. Our results provide a plausible explanation for the experimental observation of quantum emitters with similar optical properties but widely scattered ZPL wavelengths and the experimentally observed dependence of the ZPL on the strain.
“…Prior to the detection of ODMR, no defect displaying photoluminescence had been assigned, only defects with observed magnetic properties [15,16]; defects exhibiting ODMR facilitate measurement of both the magnetic and photoluminescence properties. For one defect displaying ODMR [5], comparison of the observed magnetic properties to expectations [12] strongly suggested that the ODMR arises from the V − B defect (a charged boron vacancy), an interpretation that was quickly supported quantitatively [17,18]. Calculations have predicted that V − B has a triplet ground state [12,19], with a variety of low-energy triplet excited states predicted, within likely error limits, to have energies consistent with the observed photoemission energy [17,18].…”
Extensive photochemical and spectroscopic properties of the V − B defect in hexagonal boron nitride are calculated, concluding that the observed photoemission associated with recently observed optically detected magnetic resonance is most likely of (1) 3 E → (1) 3 A 2 origin. Rapid intersystem crossing from the defect's triplet to singlet manifolds explains the observed short excited-state lifetime and very low quantum yield. New experimental results reveal smaller intrinsic spectral bandwidths than previously recognized, interpreted in terms of spectral narrowing and zero-phonon-line shifting induced by the Jahn-Teller effect. Different types of computational methods are applied to map out the complex triplet and singlet defect manifolds, including the doubly ionized formulation of the equation-of-motion coupled-cluster theory that is designed to deal with the open-shell nature of defect states, and mixed quantum-mechanics/molecular-mechanics schemes enabling 5763-atom simulations. Two other energetically feasible spectral assignments from among the singlet and triplet manifolds are considered, but ruled out based on inappropriate photochemical properties.
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