Abstract:Oxygen doping of single-wall carbon nanotubes (SWCNTs) exposed to ozone and light has attracted attention because of their greater luminescence quantum yield than that of pristine CNTs. The luminescence at E 11 *, which is red-shifted from E 11 for pristine CNTs, originating from the oxidation appears to be also observed for small-diameter CNTs in chirality separation experiments without a particular oxidation treatment. To understand this phenomenon, we performed ab initio calculations for the adsorption of o… Show more
“… ,,,,,− Hereafter, the energy values of the intrinsic exciton PL peak and the red-shifted PL peak are referred to as E 11 and E 11 *, respectively. The red-shifted PL feature of the doped nanotubes has been attributed to a reduced band gap and exciton energy of the dopant-induced local states. ,,,− Microscopically, these defects were attributed to ether- or epoxide-type oxygen adducts ,,, that induce local midgap states with specific energies depending on the details of the local chemical structures (Figure ). This was further confirmed by comparing the experimental results of the individual SWCNTs by density functional theory (DFT) calculations .…”
“… ,,,,,− Hereafter, the energy values of the intrinsic exciton PL peak and the red-shifted PL peak are referred to as E 11 and E 11 *, respectively. The red-shifted PL feature of the doped nanotubes has been attributed to a reduced band gap and exciton energy of the dopant-induced local states. ,,,− Microscopically, these defects were attributed to ether- or epoxide-type oxygen adducts ,,, that induce local midgap states with specific energies depending on the details of the local chemical structures (Figure ). This was further confirmed by comparing the experimental results of the individual SWCNTs by density functional theory (DFT) calculations .…”
“…The electronic states of the O-doped site have been investigated based on theoretical calculations. − Mu et al carried out calculations utilizing the GW method and the Bethe–Salpeter equation (GW+BSE), in which the O-doping induces an ∼10 meV shift in the electronic states, and the resulting large Stokes shift is important for the E 11 * emission . Ma et al compared the PL of single O-doped SWNTs to that of nondoped SWNTs at low temperature and observed a wide range of shifts in the PL peaks.…”
Single-walled carbon nanotubes doped with a limited amount of oxygen (O-doped SWNTs) are expected to be novel materials due to the appearance of red-shifted new emission and enhancement of the luminescence quantum yields compared to those of pristine SWNTs, which are of importance for the development of high performance biosensors, imaging materials, and optical devices. The appearance of the new optical properties is due to the change in the electronic states induced by the oxygen doping (Odoping) of the SWNTs, thus quantitative analysis of the electronic states of the O-doped SWNTs is crucial. In this study, we have successfully determined the precise electronic states of the O-doped SWNTs based on the in situ photoluminescence (PL) electrochemical method. The measurements revealed the presence of at least two distinct O-doping sites with unique optical and electrochemical properties for all four studied chiralities. The electrochemical measurements also showed that shifts in the valence and conduction band resulting from the O doping are on the order of 0.02−0.03 eV, which is much lower than the red shift of the photoluminescence peak. This behavior agrees with the theoretical simulations using the density functional based tight binding (DFTB) method. This study suggests that the doped sites on the SWNTs act as a neutral quantum dot trapping exciton generated on the tubes.
“…Low-level covalent functionalization of semiconducting single-wall carbon nanotubes (SWCNTs) by oxygen, aryl, and alkyl groups, with the latter two classes creating sp 3 defects, introduces new photoluminescent emitting states that are strongly red-shifted from the emission commonly observed from the nanotube band-edge E 11 exciton state . In addition to being the source of new photophysical behaviors, these states are drawing significant interest as the basis for emerging functionality, with possibilities including enhanced sensing and imaging, ,, photon upconversion, − and potential to act as room-temperature single photon emitters. , Many of these behaviors arise due to localization of the diffusive band-edge exciton at the defect site. − The localized exciton adopts a modified electronic structure defined by the molecular dopant forming the defect. ,,− Localization also modifies photoluminescence (PL) saturation behavior. ,, A particularly important signature of the exciton localization at defect sites is that, because the exciton is no longer free to diffusively sample PL quenching sites along the length of the carbon nanotube, its PL lifetime is significantly extended. − , …”
Photoluminescent sp defect states introduced to single wall carbon nanotubes (SWCNTs) through low-level covalent functionalization create new photophysical behaviors and functionality as a result of defect sites acting as exciton traps. Evaluation of relaxation dynamics in varying dielectric environments can aid in advancing a more complete description of defect-state relaxation pathways and electronic structure. Here, we exploit helical wrapping polymers as a route to suspending (6,5) SWCNTs covalently functionalized with 4-methoxybenzene in solvent systems including HO, DO, methanol, dimethylformamide, tetrahydrofuran, and toluene, spanning a range of dielectric constants from 80 to 3. Defect-state photoluminescence decays were measured as a function of emission wavelength and solvent environment. Emission decays are biexponential, with short lifetime components on the order of 65 ps and long components ranging from around 100 to 350 ps. Both short and long decay components increase as emission wavelength increases, while only the long lifetime component shows a solvent dependence. We demonstrate that the wavelength dependence is a consequence of thermal detrapping of defect-state excitons to produce mobile E excitons, providing an important mechanism for loss of defect-state population. Deeper trap states (i.e., those emitting at longer wavelengths) result in a decreased rate for thermal loss. The solvent-independent behavior of the short lifetime component is consistent with its assignment as the characteristic time for redistribution of exciton population between bright and dark defect states. The solvent dependence of the long lifetime component is shown to be consistent with relaxation via an electronic to vibrational energy transfer mechanism, in which energy is resonantly lost to solvent vibrations in a complementary mechanism to multiphonon decay processes.
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