2017
DOI: 10.1016/j.actamat.2016.09.049
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Ab initio modeling of dislocation core properties in metals and semiconductors

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Cited by 240 publications
(142 citation statements)
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“…Fixing σ = 1.5b, the dimensionless pressure field f (x i , y j ) can then be computed, and the minimized quantities in brackets in Eqs. (25) and (26) When both gaussian peaks are well separated, i.e. when d > 10b, there are two minimum energy configurations leading to two different minimized coefficients for both zero-temperature stress and energy barrier.…”
Section: Discussionmentioning
confidence: 99%
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“…Fixing σ = 1.5b, the dimensionless pressure field f (x i , y j ) can then be computed, and the minimized quantities in brackets in Eqs. (25) and (26) When both gaussian peaks are well separated, i.e. when d > 10b, there are two minimum energy configurations leading to two different minimized coefficients for both zero-temperature stress and energy barrier.…”
Section: Discussionmentioning
confidence: 99%
“…(25) and (26) can be related -under certain conditions -to the so-called "lattice misfit parameter" δ. Specifically, neglecting the fluctuations in solute/dislocation interactions, assuming that all alloying elements can crystallize in the same structure, and assuming that Vegard's law is followed for the lattice parameter variations with alloy composition, the misfit parameter is δ = n c n ∆V 2 n /3V , with V the atomic volume of the average matrix.…”
Section: Elastic Interaction Modelmentioning
confidence: 99%
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