2018
DOI: 10.1007/s10948-018-4731-7
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Ab Initio Investigation of Structural, Electronic, and Magnetic Properties of Cr-Doped ZnS and ZnSe in Wurtzite Structure

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Cited by 4 publications
(3 citation statements)
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“…The total spin-up DOS exceeds the spin-down near the Fermi level, and in the lower and higher energy, these DOSs are almost symmetrical and weakly polarized. The majority spin band has a semimetallic nature due to the top of the valence band cutting the Fermi level with the existence of a gap between the valence and the conduction bands . The minority spin bands have a specific band gap in the vicinity of the Fermi level.…”
Section: Resultsmentioning
confidence: 99%
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“…The total spin-up DOS exceeds the spin-down near the Fermi level, and in the lower and higher energy, these DOSs are almost symmetrical and weakly polarized. The majority spin band has a semimetallic nature due to the top of the valence band cutting the Fermi level with the existence of a gap between the valence and the conduction bands . The minority spin bands have a specific band gap in the vicinity of the Fermi level.…”
Section: Resultsmentioning
confidence: 99%
“…The majority spin band has a semimetallic nature due to the top of the valence band cutting the Fermi level with the existence of a gap between the valence and the conduction bands. 56 The minority spin bands have a specific band gap in the vicinity of the Fermi level.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…[1,2] The development of Zn-based DMSs II-VI group shows magnificent properties, which have a huge opportunity to be applied in spintronics. [3][4][5][6] These materials have attracted a lot of attention as materials for spintronic applications [7][8][9][10][11][12] because of their half-metallic ferromagnetic (HMFM) behaviors at Curie temperatures higher than room temperature. [13][14][15] These properties were observed in V-, Cr-, and Mn-doped ZnO and ZnTe [16] also in V-, Cr-, and Fe-doped CdTe, [17][18][19] in Cd-and Mn-doped CdS, [20][21][22] and Mn-doped GaAs.…”
mentioning
confidence: 99%