Ab-initio investigation of electronic and magnetic properties of the 18-valence-electron fully-compensated ferrimagnetic (CrV)XZ Heusler compounds: A prototype for spin-filter materials

Özdoğan, K.; Şaşıoğlu, E.; Galanakis, I.

doi:10.1016/j.commatsci.2015.07.054

Cited by 20 publications

(8 citation statements)

References 41 publications

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“…et al 11 .) Among these Heusler SFMs, CrVTiAl is a promising candidate material that could be utilized at room temperature, as it is a fully-compensated ferrimagnet with a predicted T C > 2000 K. 10,12 Previous experiments on bulk CrVTiAl have established that T C is in excess of 400 K and that partially disordered samples show semiconducting behavior with a magnetic moment that is small and nearly temperature independent. [13][14][15] Density functional theory (DFT) studies have revealed that the semiconducting phase of CrVTiAl is stable under Cr-V swapping, but the material becomes metallic under Ti-Al mixing.…”

Section: Introductionmentioning

confidence: 99%

Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl

et al. 2019

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The spin-filter material CrVTiAl is a promising candidate for producing highly spin-polarized currents at room temperature in a nonmagnetic architecture. Thin films of compensated-ferrimagnetic CrVTiAl have been grown and their electrical and magnetic properties have been studied. The resistivity shows two-channel semiconducting behavior with one disordered gapless channel and a gapped channel with activation energy ∆E= 0.1 -0.2 eV. Magnetoresistance measurements to B = 35 T provide values for the mobilities of the gapless channel, leading to an order of magnitude difference in the carrier effective masses, which are in reasonable accord with our density-functional-theory based results. The density of states and electronic band structure is computed for permutations of the four sublattices arranged differently along the (111) body diagonal, yielding metallic (Cr-V-Al-Ti), spin-gapless (Cr-V-Ti-Al) and spin-filtering (Cr-Ti-V-Al) phases. Robustness of the spin-gapless phase to substitutional disorder is also considered.FIG. 1. Schematic of a spin-filter device. The SFM is sandwiched between two nonmagnetic metallic contacts. As the barrier height for the electrons with different spin directions is different, the spin with the smaller band gap (barrier height) dominates the tunneling current.

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Section: Introductionmentioning

confidence: 99%

Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl

et al. 2019

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“…Later, it was found that it is a fully compensated ferrimagnet with distinct magnetic moments at Cr, V and Ti ions. 29,30 Schematic density of states of different classes of semiconductors are displayed in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Competing magnetic and spin-gapless semiconducting behavior in fully compensated ferrimagnetic CrVTiAl: Theory and experiment

et al. 2018

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We report the structural, magnetic and transport properties of polycrystalline CrVTiAl alloy along with first principles calculations. It crystallizes in the LiMgPdSn type structure with lattice parameter 6.14Å at room temperature. Absence of (111) peak along with the presence of a weak (200) peak indicates the antisite disorder of Al with Cr and V atoms. The magnetization measurements reveal a ferrimagnetic transition near 710 K and a coercive field of 100 Oe at 3 K. Very low moment and coercive field indicate fully compensated ferrimagnetism in the alloy. Temperature coefficient of resistivity is found to be negative, indicating a characteristic of semiconducting nature. Absence of exponential dependence of resistivity on temperature indicates a gapless/spin-gapless semiconducting behaviour. Electronic and magnetic properties of CrVTiAl for three possible crystallograpic configurations are studied theoretically. All the three configurations are found to be different forms of semiconductors. Ground state configuration is a fully compensated ferrimagnet with band gaps 0.58 eV and 0.30 eV for up and down spin bands respectively. The next higher energy configuration is also ferrimagnetic, but has spin-gapless semiconducting nature. The highest energy configuration corresponds to a non-magnetic gapless semiconductor. The energy differences among these configurations are quite small (< 1 mRy/atom) which hints that at finite temperatures, the alloy exists in a disordered phase, which is a mixture of the three configurations. By taking into account the theoretical and the experimental findings, we conclude that CrVTiAl is a fully compensated ferrimagnet with predominantly spin-gapless semiconductor nature.

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“…Half-metallic ferromagnets (HMFs) [1], half-metallic fully compensated ferrimagnets (HMFCFs) [5,6], spin gapless semiconductors (SGSs) [7][8][9][10][11][12][13][14][15][16][17][18], and fully compensated ferromagnetic spin gapless semiconductors (FCF-SGSs) [19][20][21] have recently received considerable interest due to their applications in a number of novel spintronic devices. The energy band diagrams for these four kinds of materials are presented in Fig.…”

Section: Introductionmentioning

confidence: 99%

Strain-induced diverse transitions in physical nature in the newly designed inverse Heusler alloy Zr 2 MnAl

Wang

Cheng

Wang

et al. 2016

Journal of Alloys and Compounds

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Ab-initio investigation of electronic and magnetic properties of the 18-valence-electron fully-compensated ferrimagnetic (CrV)XZ Heusler compounds: A prototype for spin-filter materials

Cited by 20 publications

References 41 publications

Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl

Electrical and magnetic properties of thin films of the spin-filter material CrVTiAl

Competing magnetic and spin-gapless semiconducting behavior in fully compensated ferrimagnetic CrVTiAl: Theory and experiment

Strain-induced diverse transitions in physical nature in the newly designed inverse Heusler alloy Zr 2 MnAl

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