Static and dynamic (hyper)polarizabilities of SiH3 radical have been calculated by ab initio time-dependent
unrestricted Hartree−Fock method with the use of a double-ζ plus polarization basis set. In order to examine
the effect of a Si dangling bond on the polarizabilities, calculations have also been performed on the diamagnetic
SiH4 molecule using the same method and the basis set. A comparison of the polarizabilities of the two
systems reveals that a dangling bond at the Si atom causes only a minor change in the value of polarizability,
α. However, a Si-dangling bond in the case of SiH3 distorts the symmetry in the charge distribution in such
a way that the dipole moment, μ, and the first-hyperpolarizability coefficient, β, become nonzero. The
calculations also reveal that the contributions of the α-spin electrons and β-spin electrons to (hyper)polarizabilities of the SiH3 radical substantially differ from each other. The magnitude of hyperpolarizability
coefficient is found to be determined by the contributions from different spins.