2006
DOI: 10.1016/j.apsusc.2005.07.029
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Ab initio comparative study of C54 and C49 TiSi2 surfaces

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Cited by 15 publications
(11 citation statements)
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“…With this background information in mind, we see that the deposition of Pt should favor surfaces with low energies. For C49 TiSi 2 , theoretical studies show that b planes are more stable than a and c planes by up to 20% in surface energies; the difference between various planes of C54 TiSi 2 is much less pronounced . The surface energy difference may be an important factor that governs the selective growth.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…With this background information in mind, we see that the deposition of Pt should favor surfaces with low energies. For C49 TiSi 2 , theoretical studies show that b planes are more stable than a and c planes by up to 20% in surface energies; the difference between various planes of C54 TiSi 2 is much less pronounced . The surface energy difference may be an important factor that governs the selective growth.…”
Section: Resultsmentioning
confidence: 99%
“…20 When the interface energy between Pt and the supporting substrate is relatively high, the deposition proceeds via a VolmerÀ Weber island mechanism, where nanoparticles instead the difference between various planes of C54 TiSi 2 is much less pronounced. 25 The surface energy difference may be an important factor that governs the selective growth. It is noted that although Si-termination on the top and bottom (020) surfaces of TiSi 2 nanonets has been unambiguously confirmed, further research is needed to understand why no Pt particles grow on the side surfaces at all.…”
Section: Resultsmentioning
confidence: 99%
“…As a result, its (020) planes are prone to be passivated by elements that can form bonds with Si, such as Cl or H, both abundant in the CVD environment for the synthesis of TiSi 2 nanonets. 38 We, therefore, understood the unique two-dimensional structure as a direct result of the crystal structure. The growth mechanism is proposed as follows.…”
Section: Synthesis and Structure Of Tisi 2 Nanonetsmentioning
confidence: 99%
“…For some high‐temperature materials, the phase transition can happen easily under high‐temperature or high‐pressure environment. For example, Chen et al have pointed out that MoSi 2 undergoes a phase transition from tetragonal C11 b structure to hexagonal C40 structure when the temperature is above 1900°C Moreover, the first formed C49‐TiSi 2 can change into C54 phase at the higher temperature …”
Section: Introductionmentioning
confidence: 99%