2017
DOI: 10.1007/s12648-017-0971-9
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Ab-initio calculations on half-Heusler NiXSn (X = Zr, Hf) compounds: electronic and optical properties under pressure

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Cited by 5 publications
(2 citation statements)
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“…H.B. Ozisik et al [21] explored the effect of pressure on the electronic properties of half-Heusler NiXSn (X = Zr, Hf) compounds via the GGA approach, they found that both compound are semiconductor with a narrow-band-gap. Beyond a critical pressure of 161 GPa and 229 GPa for NiZrSn and NiHfSn respectively, the compounds become metallic.…”
mentioning
confidence: 99%
“…H.B. Ozisik et al [21] explored the effect of pressure on the electronic properties of half-Heusler NiXSn (X = Zr, Hf) compounds via the GGA approach, they found that both compound are semiconductor with a narrow-band-gap. Beyond a critical pressure of 161 GPa and 229 GPa for NiZrSn and NiHfSn respectively, the compounds become metallic.…”
mentioning
confidence: 99%
“…The energy band gap, which is caused by Ti-3d and Co-3d electrons, increases with increasing pressure on the TiCoSb half-Heusler alloy. The electronic properties of NiXSn(X = Zr, Hf) alloys [28] have been investigated using ab initio calculations and conversion from the indirect to direct band gap at 50 GPa and 127 GPa for NiZrSn and NiHfSn alloys, respectively. CuMnSb semi-Heusler alloys [29] were measured under pressure, and it was found that the Neel temperature of CuMnSb increased with pressure.…”
mentioning
confidence: 99%