A2× voltage generator analytical model

Abstract

Since portable systems and processing power applications demand efficient power consumption, this paper deals with the development of an analytical model based on the on-resistance effect of MOS switches to design a silicon-based char-pump voltage generator (VG). This model that is developed for adding design parameters under the designer’s control is a useful design tool to quickly estimate the VG’s performance in the time domain. Numerical results are compared with transistor-level simulation to validate not only the analytical model, but also to estimate the integration area of a silicon-based VG. It was found that an on-resistance ranging from zero to 50 Ω presents a relative error of 2%. Experimental results show the usefulness of the proposed design model.

Development of a Synchronous-Generator Experimental Bench for

“…where 2and taking into account that the angle between the a phase and field winding is 90 degrees which leads to (3)-(6), where it is seen that the d-axis quantities are decoupled from the q-axis and zero sequence components [15]. The expressions for the q-axis voltage and current are derived by considering that the angle between the a phase and field winding is zero degrees, which gives Equations (6)- (8), where it is seen that only q-axis components are obtained and the d-axis and zero sequence quantities are cancelled out.…”

“…Experimental data are commonly used in other engineering areas where data are essentially used to validate mathematical models. Some examples of data application have been reported in power electronics and in chemical engineering [8], [9]. Educational virtual instruments programmed in the LabVIEW software can be found in [10], [11], [12].…”