A ᐃT _j Reduced Power Module With Inbuilt Phase Change Material for Reliability Enhancement

Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip

“…However, a discussion about potential heat-absorbing materials during OCs is available in [7,36]. Metals such as copper, aluminum, gold, diamond, and graphite have been investigated for a heat flux of 400 (W/cm 2 ) during 200 ms. All the proposed solutions discussed above can result in multiple times increased reliability of the semiconductor devices due to decreased temperature swing during OCs, as proved experimentally for the power module with a metallic container for PCM in [29,37]. Nevertheless, the exact increase in reliability in terms of cycles to failure depends on the temperature swing and duration of temperature swings [37][38][39][40].…”

“…Another method is to add heat-absorbing material below the chip. One such method using combinations of phase change materials (PCMs) with metal containers has been investigated in [25][26][27][28][29] for the duration of 3-30 s. PCMs have high latent heat of fusion and low thermal conductivity; hence, the metal containers (being an excellent thermal conductor) in them effectively provide paths of lower thermal resistance such that the heat can be transferred to the PCM. This method suffers from the disadvantage that the junction temperature during steady-state operation is also increased due to the increase in the overall thermal resistance for the heat flow towards the heat sink.…”