IMTC/99. Proceedings of the 16th IEEE Instrumentation and Measurement Technology Conference (Cat. No.99CH36309)
DOI: 10.1109/imtc.1999.776806
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A β-error elimination in the translinear reduction of the "log-antilog" multiplier/divider

Abstract: A new t p e of the one-quadrant analog multipiYer/divider based on the translinear reduction of the Vog-anMog" (TLRLA) mdt~plier/dir.ider circuit is presented in this paper. A new techniquc for the error elimination due to the finite crnrrent gain $ of the used bipolair junction transistors (BJTS) is described. By ai fding seven BJTs (three emitter followers and two simple current mirrors) to the classical TLRLA rnuklpfier/divider, a significant impro vement in xcuracy is achieved. The lineiwity error is small… Show more

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Cited by 5 publications
(7 citation statements)
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“…• The largest gain peaks occur for larger transimpedances T (for smaller control current I C2 ) in 0.35 mm SiGe than for the transimpedances T (for control currents I C2 ) in 0.6 mm Si. These conclusions completely confirm the predictions of Equations (8)- (12), with corresponding MATLAB simulations shown in Figures 6-15. In other words, in the case of the proposed OFE with variable transimpedance using VGCA with BJT TLL, the chip in a cheaper technology with worse BJT parameters (0.6 mm Si) possesses a much better frequency response and stability than the chip in a more expensive technology with better BJT parameters (0.35 mm SiGe).…”
Section: Resultssupporting
confidence: 87%
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“…• The largest gain peaks occur for larger transimpedances T (for smaller control current I C2 ) in 0.35 mm SiGe than for the transimpedances T (for control currents I C2 ) in 0.6 mm Si. These conclusions completely confirm the predictions of Equations (8)- (12), with corresponding MATLAB simulations shown in Figures 6-15. In other words, in the case of the proposed OFE with variable transimpedance using VGCA with BJT TLL, the chip in a cheaper technology with worse BJT parameters (0.6 mm Si) possesses a much better frequency response and stability than the chip in a more expensive technology with better BJT parameters (0.35 mm SiGe).…”
Section: Resultssupporting
confidence: 87%
“…Consequently, because the control current I C2 flows through the BJT Q 6 , the current gain b 6 of the BJT Q 6 is nearly constant. The influence of the finite current gain b of the BJTs used can be avoided by applying the approach presented in [12]. The capacitance C x at the input of the VGCA shown in Figure 4 is C x %C Iin.…”
Section: Discussionmentioning
confidence: 99%
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