2024
DOI: 10.1039/d3ta05900f
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A ZnO&GeSe composite electron transport layer for organic solar cells

Jingyu Tan,
Hongye Li,
Yapeng Sun
et al.

Abstract: The deposition of 2D GeSe on the surface of ZnO improves the surface stability of ZnO and reduces the probability of forming defect vacancies on the surface of ZnO, thereby achieving high photoelectric conversion efficiency.

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Cited by 8 publications
(1 citation statement)
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“…First, to delve into the carrier properties in devices, the hole mobility (μ h ) and electron mobility (μ e ) can be determined using the space-charge-limited-current (SCLC) method, as depicted in Figure a,b. For ternary random-blended PSCs, μ h and μ e were calculated as 3.84 × 10 –4 and 5.44 × 10 –4 cm 2 V –1 s –1 , respectively. In contrast, the carrier mobility of ternary gradient-blended devices showed a slight improvement (μ h for 4.72 × 10 –4 cm 2 V –1 s –1 , μ e for 6.01 × 10 –4 cm 2 V –1 s –1 ).…”
Section: Resultsmentioning
confidence: 99%
“…First, to delve into the carrier properties in devices, the hole mobility (μ h ) and electron mobility (μ e ) can be determined using the space-charge-limited-current (SCLC) method, as depicted in Figure a,b. For ternary random-blended PSCs, μ h and μ e were calculated as 3.84 × 10 –4 and 5.44 × 10 –4 cm 2 V –1 s –1 , respectively. In contrast, the carrier mobility of ternary gradient-blended devices showed a slight improvement (μ h for 4.72 × 10 –4 cm 2 V –1 s –1 , μ e for 6.01 × 10 –4 cm 2 V –1 s –1 ).…”
Section: Resultsmentioning
confidence: 99%