2015
DOI: 10.1016/j.mejo.2015.03.004
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A zero charge-pump mismatch current tracking loop for reference spur reduction in PLLs

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Cited by 20 publications
(5 citation statements)
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“…Injection Current ence [12], [14], and [16]. Compared with work in reference [12], [14], the reference spur is reduced by almost 21 dB on the condition of near in-band phase noise performance, VCO gain and loop bandwidth. In [16], the reference spur is suppressed but at the price of large loop bandwidth and larger area.…”
Section: Conditionsmentioning
confidence: 89%
See 1 more Smart Citation
“…Injection Current ence [12], [14], and [16]. Compared with work in reference [12], [14], the reference spur is reduced by almost 21 dB on the condition of near in-band phase noise performance, VCO gain and loop bandwidth. In [16], the reference spur is suppressed but at the price of large loop bandwidth and larger area.…”
Section: Conditionsmentioning
confidence: 89%
“…In order to suppress the ripple, decreasing the loop bandwidth is an effective way [14,15]. Besides, many other attempts have also been tried to reduce reference spur in the past few years [16,17,18,19,20,21,22,23,24,25].…”
Section: Introductionmentioning
confidence: 99%
“…To circumvent this problem, the charge pump was split into two branches, and an opamp was used as a buffer between the two branches [15]. This method of current steering was enhanced and improved, by using adaptive body bias tuning, and by reducing the threshold voltage of the p‐MOSFET [16]. Alternatively, the opamp was used in open‐loop configuration, and to eliminate the residual channel charges, dummy switches were included [17].…”
Section: Related Previous Workmentioning
confidence: 99%
“…However, the finite current step of the signed counter leads to the difficulty in achieving exact matching of the CP current. The auxiliary loop-based calibration method [23] uses successive approximation register (SAR) and DAC at the cost of taking a long time to return to the lock mode. On the other hand, an adaptive body bias technique [24,25] using a number of resistances adjusts the threshold voltage of MOS transistors to reduces current variation caused by the process variation.…”
Section: Introductionmentioning
confidence: 99%