A write-once-read-many-times memory based on a sol-gel derived copper oxide semiconductor

Hsu, Chih-Chieh; Tsai, Jung-En; Lin, Yu-Sheng

doi:10.1016/j.physb.2019.03.007

Cited by 14 publications

(10 citation statements)

References 79 publications

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“…Once the information is written, the device stores it permanently and can be read many times. 38 When the initial sweep direction is reversed, the device also showed almost similar WORM behavior with a negative threshold voltage V Th = −0.96 V (Figure 2b). This indicates that the observed switching behavior for the Au/Lyso/ITO device is independent of the initial sweep direction.…”

Section: ■ Results and Discussionmentioning

confidence: 81%

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Banik,

Sarkar,

Bhattacharjee

et al. 2023

ACS Omega

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Biocompatibility and transient nature of electronic devices have been the matter of attention in recent times due to their immense potential for sustainable solutions toward hazardous e-wastes. In order to fulfill the requirement of high-density data-storage devices due to explosive growth in digital data, a resistive switching (RS)-based memory device could be the promising alternative to the present Si-based electronics. In this research work, we employed a biocompatible enzymatic protein lysozyme (Lyso) as the active layer to design a RS memory device having a device structure Au/Lyso/ITO. Interestingly the device showed transient, WORM memory behavior. It has been observed that the WORM memory performance of the device was very good with high memory window (2.78 × 10 2 ), data retention (up to 300 min), device yield (∼73.8%), read cyclability, as well as very high device stability (experimentally >700 days, extrapolated to 3000 days). Bias-induced charge trapping followed by conducting filament formation was the key behind such switching behavior. Transient behavior analysis showed that electronic as well as optical behaviors completely disappeared after 10 s dissolution of the device in luke warm water. Cytotoxicity of the as-prepared device was tested by challenging two environmentally derived bacteria, S. aureus and P. aeruginosa, and was found to have no biocidal effects. Hence, the device would cause no harm to the microbial flora when it is discarded. As a whole, this work suggests that Lyso-based WORM memory device could play a key role for the design of transient WORM memory device for sustainable electronic applications.

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Section: ■ Results and Discussionmentioning

confidence: 81%

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Banik,

Sarkar,

Bhattacharjee

et al. 2023

ACS Omega

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“…The plentiful Al cations induce an abrupt increase, and the rupture of the established conductive filaments by negative voltage is difficult to fully carry out (Figure c). Thus, the resistive switching is irreversible and the LRS can maintain stable even with a high negative voltage, exhibiting a superior WORM performance. − For Al/ZnO NPs/CuO NWs/Cu based memristors, the abundant oxygen defects in ZnO NPs (XPS result as shown in Figure g) adsorbed on the surface of CuO NWs serve as holes or electron traps and provide acceptors for carriers. In this case, the trapping/detrapping effect under the electric field dominates the resistive switching behaviors instead of the Al conductive filament due to the low migration barrier of the electrons.…”

Section: Resultsmentioning

confidence: 99%

A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

Wang

Zhang

et al. 2022

ACS Appl. Electron. Mater.

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As an emerging electronic device, a memristor facilitates the realization of neuromorphic computing systems. However, high-performance neuromorphic computing systems require not only robust analog memristors but also digital memristors with complementary functions. Here, a digital–analog integrated memristor based on Al/ZnO NPs/CuO NWs/Cu is proposed and demonstrated. First, the electrical properties of the CuO NWs based device are investigated, which exhibit a write-once-read-many-times (WORM) performance. Then, typical bipolar resistive switching behaviors are realized by spin-coating the ZnO NPs to form an Al/ZnO NPs/CuO NWs/Cu based memristor. Through tuning of the applied voltage, an abrupt-to-gradient transition of conductance is achieved in situ. Several analog behaviors, such as long-term potentiation/depression (LTP/LTD), and paired-pulse facilitation/depression (PPF/PPD) are effectively emulated by applying a series of specified electrical measurements to the memristor, which proves the achievement of a digital–analog integrated memristor. Furthermore, on the basis of the LTD and LTP behaviors of the memristor, neural network simulations for handwritten recognition are implemented. The results reveal high recognition accuracies of up to 93%, which are close to the performances for ideal memristors.

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“…Another critical parameter on the synthesis process of resistive switching devices is the metal salt precursors, which are subdivided into three counter anions groups; [ 100 ] oxidants (hydrated nitrates), [ 72,79,80,98,101–121 ] reducers (alkoxides, [ 117,122–125 ] acetates, [ 72,76,78,79,104,105,109,111,113–118,126–153 ] and acetylacetonates [ 81,134,144,154–157 ] ), and neutrals (chlorine‐based). [ 63,71,103,107,110,112,116,119,125,132,158–164 ] Among these, oxidant counter ions are preferable due to the high oxidizing power (negative charge), greater solubility in water or polar organic solvents and low decomposition temperature, which are related to the electronic interactions between the metal and the nitrate group, as shown in Figure 9c.…”

Section: Fundamentals Of Solution‐based Metal Oxide Rramsmentioning

confidence: 99%

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

et al. 2020

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Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and technologies. Most of the reported resistive switching devices use conventional methods (physical and chemical vapor deposition), which are quite expensive due to their up‐scale production. Solution‐processing methods have been improved, being now a reliable technology that offers many advantages for resistive random‐access memory (RRAM) such as high versatility, large area uniformity, transparency, low‐cost and a simple fabrication of two‐terminal structures. Solution‐based metal oxide RRAM devices are emergent and promising non‐volatile memories for future electronics. In this review, a brief history of non‐volatile memories is highlighted as well as the present status of solution‐based metal oxide resistive random‐access memory (S‐RRAM). Then, a focus on describing the solution synthesis parameters of S‐RRAMs which induce a massive influence in the overall performance of these devices is discussed. Next, a precise analysis is performed on the metal oxide thin film and electrode interface and the recent advances on S‐RRAM that will allow their large‐area manufacturing. Finally, the figures of merit and the main challenges in S‐RRAMs are discussed and future trends are proposed.

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A write-once-read-many-times memory based on a sol-gel derived copper oxide semiconductor

Cited by 14 publications

References 79 publications

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications

A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices

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