A work function study of ultra-thin alumina formation on NiAl(110) surface

Song, Weijie; Yoshitake, Michiko

doi:10.1016/j.apsusc.2005.03.116

Cited by 58 publications

(28 citation statements)

References 17 publications

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“…Figure 7 shows the relative work function changes of Al 2 O 3 /Ni 3 Al(111) upon Sm deposition at 300 K. The work function of the clean thin Al 2 O 3 /Ni 3 Al(111) film is measured to be 4.3 eV, in close agreement with the value reported for thin Al 2 O 3 formed on NiAl(110) (4.27 eV). 71 After the surface is covered with Sm, it can be seen clearly that the work function decreases very quickly with Sm coverage below 0.3 ML, followed by a slower decrease up to ∼3 ML, after which it reaches a relatively constant value of 1.7 eV below the value of the clean thin Al 2 O 3 /Ni 3 Al(111) film. This results in a final work function value of 2.6 eV.…”

Section: A Structure and Morphology Of Alumina Filmsmentioning

confidence: 92%

Growth and electronic structure of Sm on thin Al2O3/Ni3Al(111) films

Cheng

et al. 2012

The Journal of Chemical Physics

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The growth and electronic structure of vapor-deposited Sm on a well-ordered Al(2)O(3)/Ni(3)Al(111) ultrathin film under ultrahigh vacuum conditions at room temperature have been studied comprehensively using synchrotron radiation photoemission spectroscopy, X-ray photoelectron spectroscopy, work function measurements, scanning tunneling microscopy, and low-energy electron diffraction. Our results indicate that at room temperature Sm grows in a layer-by-layer fashion up to at least 1 ML, followed by three-dimensional growth. The interaction of Sm with Al(2)O(3) thin films leads to an initial oxidation of Sm, accompanied by a parallel reduction of the Al(2)O(3) substrate. Both the oxidation states of Sm(2+) and Sm(3+) are found at low coverage (<1 ML). The concentration of Sm(2+) saturates below 0.4 ML, while that of Sm(3+) keeps increasing until the metallic state of Sm appears at high coverages.

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Section: A Structure and Morphology Of Alumina Filmsmentioning

confidence: 92%

Growth and electronic structure of Sm on thin Al2O3/Ni3Al(111) films

Cheng

et al. 2012

The Journal of Chemical Physics

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“…The work function of sample B is higher than previous results obtained on alumina/NiAl(110) system (4.2 eV). [23] In the case of sample A, the WF value is even higher, which can be explained by different quality and morphology of the layer. The oxide layer on sample A is believed to be not continuous and its surface is not flat.…”

Section: Xps Measurementsmentioning

confidence: 94%

Growth of thin epitaxial alumina films onto Ni(111): an electron spectroscopy and diffraction study

Nemšák

Škála

Yoshitake

et al. 2010

Surface & Interface Analysis

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An epitaxial ultra-thin alumina layer was prepared on Ni(111) by simultaneous Al deposition and oxidation at elevated temperatures. Different deposition procedures lead to creation of oxide layers of various thicknesses and quality. Low-energy electron diffraction revealed epitaxial parameters of the films and the relationship between the nickel substrate and the oxide overlayer. Core-level photoelectron spectroscopy using Al-K α and synchrotron-generated photons show that the oxide-metal interface is formed by oxygen atoms, which is contrary to the case of epitaxial alumina layers prepared by the oxidation of NiAl(110) and Ni 3 Al(111) surfaces. The results of a photoelectric work function measurement are also discussed.

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“…According to the COB model mentioned above [31], the critical distance d c ≈ √ 2q/W φ for charge transfer can be estimated, where q is the charge of the projectile ion and W φ is the work function of a metal surface. In our case, the effective work function can be estimated approximately 4 eV [35]. With this estimation, we can calculate the radius for electron capture and resulting neutralization fraction from the ratio between the capture radius and the capillary radius [36], 2d c /r ≈ 4.1%.…”

Section: Positive-ion Productionmentioning

confidence: 89%

Absence of a guiding effect and charge transfer in the interaction of keV-energy negative ions with Al2O3nanocapillaries

et al. 2011

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In this work, the efficient electron loss process was observed for the transmission of 10-to 18-keV Cu − and Cl − ions through Al 2 O 3 nanocapillaries. The fractions of the scattered particles were simultaneously measured using a position-sensitive microchannel plate detector. The neutrals were guided through the capillary via multiple grazing scattering. In particular, the scattered Cl − ions were observed in the transmission, whereas no Cu − ion was formed. In contrast to highly charged ions, these results support strongly the fact that the scattering events dominate the transport of negative ions through the nanocapillaries and that there is no direct evidence for the formation of negative charge patches inside the capillaries which are able to repulse and guide negative ions efficiently.

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A work function study of ultra-thin alumina formation on NiAl(110) surface

Cited by 58 publications

References 17 publications

Growth and electronic structure of Sm on thin Al2O3/Ni3Al(111) films

Growth and electronic structure of Sm on thin Al2O3/Ni3Al(111) films

Growth of thin epitaxial alumina films onto Ni(111): an electron spectroscopy and diffraction study

Absence of a guiding effect and charge transfer in the interaction of keV-energy negative ions with Al2O3nanocapillaries

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