A Wideband SiGe BiCMOS Frequency Doubler With 6.5-dBm Peak Output Power for Millimeter-Wave Signal Sources

Wu, Kefei; Muralidharan, Sriram; Hella, Mona M.

doi:10.1109/tmtt.2017.2732953

Cited by 51 publications

(7 citation statements)

References 19 publications

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“…T HE TeraFETs, plasmonic field effect transistors (FETs) applied in the terahertz (THz) frequency range, have been proposed since the early 1990s [1], [2], [3]. Over decades they have found wide applications in THz mixers [4], [5], frequency multipliers [6], [7], transceivers [8], [9], imagers and sensors [10], [11], [12], etc. Recent interests include operating TeraFET detectors at high incident power, which could be used to measure the duration and structure of the high-power THz pulses [13].…”

Section: Introductionmentioning

confidence: 99%

TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range

Liu

Shur

2020

IEEE Trans. THz Sci. Technol.

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We present technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon TeraFETs, plasmonic field effect transistors (FETs), for terahertz (THz) detection validated over a wide dynamic range. The modeling results are in good agreement with the experimental data for the AlGaAs/InGaAs heterostructure FETs (HFETs) and, to the low end of the dynamic range, with the analytical theory of the TeraFET detectors. The models incorporate the response saturation effect at high intensities of the THz radiation observed in experiments and reveal the physics of the response saturation associated with different mechanisms for different material systems. These mechanisms include the gate leakage, the velocity saturation and the avalanche effect.

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Section: Introductionmentioning

confidence: 99%

TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range

Liu

Shur

2020

IEEE Trans. THz Sci. Technol.

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“…The key argument is the higher achievable output power. Here, signal sources that rely on frequency multiplication have mainly been used [163]- [165]. All of the mentioned works implement frequency doublers, driven by an amplifier stage, to generate output powers of +6 to +8 dBm in the frequency range from 200 to 260 GHz.…”

Section: Toward Thz Communication Transceiversmentioning

confidence: 99%

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

Kissinger

Kahmen

Weigel

2021

IEEE Trans. Microwave Theory Techn.

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This invited paper reviews the progress of silicon-germanium (SiGe) bipolar-complementary metal-oxidesemiconductor (BiCMOS) technology-based integrated circuits (ICs) during the last two decades. Focus is set on various transceiver (TRX) realizations in the millimeter-wave range from 60 GHz and at terahertz (THz) frequencies above 300 GHz. This article discusses the development of SiGe technologies and ICs with the latter focusing on the commercially most important applications of radar and beyond 5G wireless communications. A variety of examples ranging from 77-GHz automotive radar to THz sensing as well as the beginnings of 60-GHz wireless communication up to THz chipsets for 100-Gb/s data transmission are recapitulated. This article closes with an outlook on emerging fields of research for future advancement of SiGe TRX performance.

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“…One approach of generating power at THz frequencies is based on amplifier-multiplier chains with the input taken from a stable low-frequency source to generate the output signal by mixing effects at higher harmonic frequencies as in [3][4][5][6]. This approach suffers from high DC power and large chip area.…”

Section: Introductionmentioning

confidence: 99%

About 250/285 GHz push–push oscillator using differential gate equalisation in digital 65‐nm CMOS

Fahs

Aouimeur

et al. 2019

IET Microwaves, Antennas & Propagation

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This study presents a push–push oscillator architecture based on differential gate equalisation to enhance the oscillation frequency while providing relatively high output power with ultra‐compact layout form factor. The frequency enhancement is derived as a function of the equivalent RLC model of the oscillator's main constituents. The proposed principle is applied to a terahertz oscillator in the 200–300 GHz range to mitigate the excessive substrate and skin effect losses in standard digital 65‐nm complementary metal–oxide–semiconductor technology at such high frequencies. The design concept is validated using two single‐stage push–push oscillators. The first oscillator shows −8.1 dBm output power at 250 GHz oscillation frequency and −106.8 dBc/Hz phase noise at 10 MHz offset while consuming 76 mW power from 1.5 V DC supply voltage. The chip area is 200 × 250 μm2. The second oscillator provides −14.8 dBm output power at 285 GHz and −106 dBc/Hz phase noise at 10 MHz offset with 80 mW power consumption from 1.5 V DC supply. The chip area is 200 × 200 μm2.

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A Wideband SiGe BiCMOS Frequency Doubler With 6.5-dBm Peak Output Power for Millimeter-Wave Signal Sources

Cited by 51 publications

References 19 publications

TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range

TCAD Model for TeraFET Detectors Operating in a Large Dynamic Range

Millimeter-Wave and Terahertz Transceivers in SiGe BiCMOS Technologies

About 250/285 GHz push–push oscillator using differential gate equalisation in digital 65‐nm CMOS

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