A wideband CMOS LNA using noise‐canceling topology and g_m‐boosting technique

Abstract

In this letter, a wideband low noise amplifier (LNA) using noise‐canceling topology and gm‐boosting technique is proposed. The noise‐canceling topology is used in the common gate (CG) amplifier to achieved better noise figure (NF) and wideband input matching. Meanwhile, the requirement of the input transconductance can be obviously decreased due to the application of gm‐boosting technique, which effectively alleviate the trade‐off between power consumption and voltage gain. The 3‐dB bandwidth of the LNA is from 2.1 to 4.1 GHz, covering widely used 5 G wireless communication frequency bands (n1, n7, n38, n41, n66, and n78 bands). The proposed LNA shows a flat and low measured NF of 3.3–3.6 dB within the operating bandwidth, while the peak power gain is 18.7 dB. The power consumption of this circuit is 16 mW with 1.2 V supply voltage, and the core area of the circuit is 0.066 mm2 with only one inductor for the whole chip.