A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications

Yamaguchi, Yutaro; Nakatani, Keigo; Shinjo, Shintaro

doi:10.1109/bcicts48439.2020.9392982

Cited by 18 publications

(16 citation statements)

References 6 publications

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“…The performance of the DPA3W is summarized and compared to the State Of the Art (SOA) in Table V. The results prove to be competitive over a 1 GHz band, especially in terms of efficiency at deep back-off, although not outperforming twoway DPAs [26], [27] in terms of efficiency at saturation and at 6 dB OBO. Furthermore, the PAE is strongly affected by the complexity in terms of presence/absence of driver stages, and thus by the gain.…”

Section: A Continuous Wave (Cw) Measurementsmentioning

confidence: 99%

3-Way Doherty Power Amplifiers: Design Guidelines and MMIC Implementation at 28 GHz

Piacibello

Camarchia

Colantonio

et al. 2023

IEEE Trans. Microwave Theory Techn.

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This article presents the design strategy and the implementation of a three-way Doherty power amplifier (DPA3W) to enhance the efficiency at deep power back-off. Theoretical design equations are derived, based on which design charts are drawn to explore the available design space, accounting for practical constraints related to the available technology and selected application. The proposed design strategy is demonstrated by the design, fabrication and experimental characterization of a three-way multistage Doherty amplifier optimized for efficiency peaks at 6 and 12 dB back-off. The amplifier is realized on the WIN Semiconductors 150 nm GaN-SiC high-electron-mobility transistor (HEMT) monolithic process at 28 GHz, targeting 5G applications. The prototype achieves saturated output power in excess of 34 dBm and power added efficiency of the order of 15% from 6 to 12 dB back-off, demonstrating competitive performance and a good agreement between simulations and measurements, thus validating the approach.

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Section: A Continuous Wave (Cw) Measurementsmentioning

confidence: 99%

3-Way Doherty Power Amplifiers: Design Guidelines and MMIC Implementation at 28 GHz

Piacibello

Camarchia

Colantonio

et al. 2023

IEEE Trans. Microwave Theory Techn.

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“…Figure 19 shows the chip photograph of the GaN Doherty MMIC PA, which was fabricated by the 0.15 μm gate length GaN process on the 50 μm thickness SiC substrate with the ISV structure [31]. Figure 20 shows the schematic of the impedance inverter formed by the Tee-network for the output combiner of the fabricated DPA.…”

Section: Gan Mmic Pa Technology Trend In 5g Mm-wave Systemmentioning

confidence: 99%

“…Fig 22. Measured ACPR, EVM, and PAE[31] Table4. State-of-the-art of a Ka-band Doherty GaN power amplifiers.…”

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confidence: 99%

A Review of GaN MMIC Power Amplifier Technologies for Millimeter-Wave Applications

Nakatani

Yamaguchi

Torii

et al. 2022

IEICE Trans. Electron.

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Keigo NAKATANI † , member, Yutaro YAMAGUCHI † , member, Takuma TORII † , member, Masaomi TSURU † , senior member SUMMARY GaN microwave monolithic integrated circuit (MMIC) power amplifiers (PAs) technologies for millimeter-wave (mm-wave) applications are reviewed in this paper. In the mm-wave band, GaN PAs have achieved high-output power as much as traveling wave tube amplifiers used in satellite communications. Additionally, GaN PAs have been integrated enough to be used for 5G and Beyond-5G. In this paper, a high accuracy large-signal GaN-HEMT modeling technique including the trapping effects is introduced in mm-waves. The prototyped PAs designed with the novel modeling technique have achieved RF performance comparable to that of the state-of-the-art GaN PAs in mm-wave.

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“…ersion December 21, 2021 submitted to Electronics 4 of 17 processes (roughly 1 mm per device, i.e. 2 mm overall for a symmetric 6 dB DPA), the wide bandgap and consequently higher breakdown voltage of GaN, allows to achieve power densities 4 times higher than in GaAs (around 2 W/mm instead of 0.5 W/mm) permitting to reach with this technology output powers of up to 4 W from a single-chip DPA without any power combination [21][22][23]. Considering as a reasonable on-chip power combination one that doubles the active periphery, single-chip DPAs achieving up to 8 W can be expected.…”

Section: Power Levels and On-chip Combinationmentioning

confidence: 99%

Watt-Level Ka-Band Integrated Doherty Power Amplifiers: Technologies and Power Combination Strategies Invited Paper

Piacibello

Camarchia

2021

Electronics

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This paper discusses some of the design choices underlying the development of watt-level integrated Doherty power amplifiers in the K and Ka band, focusing on compound semiconductor technologies. The key aspect of on-chip power combination is discussed, presenting and comparing some of the possible alternatives. Then, the impact on the achievable bandwidth and performance of different parameters is quantified, adopting an approximate analysis, which focuses on the Doherty output combiner and allows estimating the non-linear performance of the amplifier thanks to some simplifying assumptions, without requiring a full, non-linear model of the active devices. Two sample GaAs and GaN technologies are compared first, considering parameters that are representative of the currently available commercial processes, and then several power combination strategies are analyzed, adopting the GaN technology, which is currently the only one that allows achieving the power levels required by the applications directly on chip. Finally, some hints as to the impact of the output parasitic effects of the transistors on the presented analysis are given.

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A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications

Cited by 18 publications

References 6 publications

3-Way Doherty Power Amplifiers: Design Guidelines and MMIC Implementation at 28 GHz

3-Way Doherty Power Amplifiers: Design Guidelines and MMIC Implementation at 28 GHz

A Review of GaN MMIC Power Amplifier Technologies for Millimeter-Wave Applications

Watt-Level Ka-Band Integrated Doherty Power Amplifiers: Technologies and Power Combination Strategies Invited Paper

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