A Wideband 62-mW 60-GHz FMCW Radar in 28-nm CMOS

Kankuppe, Anirudh; Park, Sehoon; Renukaswamy, Pratap Tumkur; Wambacq, Piet; Craninckx, Jan

doi:10.1109/tmtt.2021.3075437

Cited by 26 publications

(5 citation statements)

References 26 publications

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“…Thus corresponding emitter length has been decided by following the trends illustrated in figure 4. In this figure 4, G opt is the optimum impedance and can be calculated by taking the modulus of Z in given by equation (4). Now this CE configuration input impedance needs to be matched to 50 Ω impedance of the input port.…”

Section: Conventional Degenerated Ce Lna With Series Inductor-based I...mentioning

confidence: 99%

“…Therefore, their usage has constraints due to the large form factor and higher cost. Whereas, due to the various advantages offered by CMOS such as scaling to the lower nodes process technology, high level of integration, low-cost, and well-established manufacturing ecosystem, it has arisen as a potential technology platform for single chip radar implementation [3,4].…”

Section: Introductionmentioning

confidence: 99%

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A Ku-band LNA with 39.2 dB gain, 1.4 dB NF and shunt inductor-based matching network

Kumar,

Ravichandran

2023

Eng. Res. Express

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A low-noise amplifier (LNA) with minimum noise figure, improved gain, operating at Ku-band, and designed using 0.13 μm bipolar complementary metal oxide semiconductor(BiCMOS) technology is described in this article. BJT along with a matching network comprising of a shunt inductor is used for optimizing noise/impedance matching in the proposed common emitter (CE) LNA with inductive emitter degeneration. Thereby, achieving ultra-low NF and gain performance along with inbuilt ESD protection circuitry. Also, the detailed mathematical analysis of design steps, impact of impedance matching network on gain and NF performance of conventional and proposed CE LNA with inductive emitter degeneration are elaborated. This proposed LNA has demonstrated a maximum gain of 39.2 dB, almost static NF of 1.4 dB to 1.64 dB across a frequency bandwidth of 2 GHz from 15.2 GHz to 17.2 GHz. It has also demonstrated a figure-of-merit (FoM) of 18.42, IP 1dB of −29.7 dBm at 16 GHz, a power intake of 24.2 mW, and layout space of 0.468 mm2.

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Section: Conventional Degenerated Ce Lna With Series Inductor-based I...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Ku-band LNA with 39.2 dB gain, 1.4 dB NF and shunt inductor-based matching network

Kumar,

Ravichandran

2023

Eng. Res. Express

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“…There is an on-going vivid debate about the standardization and commercialization of new high-volume millimeter-wave applications up to and above 100 GHz [6], [7]. Different research groups have already demonstrated the technical feasibility of radar and communications circuits at 60 GHz [8]- [13], 120 GHz [8], [14]- [16], and 140 GHz [17]- [21].…”

Section: Introductionmentioning

confidence: 99%

Built-In Self-Test of Millimeter-Wave Integrated Front-End Circuits: How Far Have We Come?

Wenger,

Meinerzhagen,

Issakov

2024

IEEE Access

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With automotive radar and 5G/6G communications, mass-market applications for millimeterwave circuits in silicon technologies have been identified or established in recent years. For high-volume, millimeter-wave integrated circuits, operating roughly between 30 GHz and 300 GHz, testability is a major concern, both from an overall cost as well as a quality assurance perspective. A solution for cost effective, low-overhead test of millimeter-wave integrated circuits is the integration of built-in self-test (BIST) features into the high-frequency front-end. Because BIST is an emerging topic in high-frequency circuit design, the field is still very fragmented. A plethora of different system concepts as well as building blocks have been proposed in recent years. This paper tries to provide a comprehensive overview of the state of the art in millimeter-wave BIST in an attempt to drive the field towards identification of standardized self-test solutions.INDEX TERMS Built-in self-test, CMOS, millimeter-wave transceivers, SiGe, silicon.

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“…In this field, CMOS-based devices [ 22 , 23 , 24 , 25 , 26 , 27 ] are also widely employed because of their high level of integration, mass production cost, and combination of RF devices, digital and analogue circuits. However, devices in this technology still consume a lot of power for millimetre-wave band applications.…”

Section: Introductionmentioning

confidence: 99%

Mechanically Reconfigurable Waveguide Filter Based on Glide Symmetry at Millimetre-Wave Bands

Tamayo‐Domínguez

Fernández-González

Quevedo–Teruel

2022

Sensors

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This paper presents the design and fabrication of a mechanically reconfigurable filter at W band based on the concept of glide symmetry. The tunability is achieved by breaking and regenerating the glide symmetry. The filters are made of two glide-symmetric pieces that can be displaced in a certain direction, and therefore, break the symmetry. The high filtering capacity of these designs is demonstrated by simulation and measurement and can also be adjusted mechanically. The transmission level in the manufactured filter varies from a value between −1 and −2 dB when the filter is in the glide symmetry position to values close to −40 dB in the stop-band when it is in the broken symmetry position. The transmission band obtained in the symmetrical mode is around 20%, but, after breaking the symmetry, it is split into two passbands of 6.5% and 11% separated by a stop-band of 6%. The position, bandwidth, filtering level and filter roll-off can be adjusted for both modes of operation by appropriately selecting the unit cell design parameters and the number of unit cells.

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A Wideband 62-mW 60-GHz FMCW Radar in 28-nm CMOS

Cited by 26 publications

References 26 publications

A Ku-band LNA with 39.2 dB gain, 1.4 dB NF and shunt inductor-based matching network

A Ku-band LNA with 39.2 dB gain, 1.4 dB NF and shunt inductor-based matching network

Built-In Self-Test of Millimeter-Wave Integrated Front-End Circuits: How Far Have We Come?

Mechanically Reconfigurable Waveguide Filter Based on Glide Symmetry at Millimetre-Wave Bands

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