A W-Band Traveling-Wave Frequency Doubler With Output Power of 9 dBm and Power Efficiency of 11.2%

Ye, Yu; Zhang, Jian; Sun, Xiaowei

doi:10.1109/lmwc.2014.2340792

Cited by 14 publications

(2 citation statements)

References 7 publications

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“…Many active multipliers based on HEMT have already been proposed . In most reports, the extraction of the desired harmonic can be implemented using short/open stubs or several kinds of filters .…”

Section: Introductionmentioning

confidence: 99%

“…Many active multipliers based on HEMT have already been proposed. 1,2 In most reports, the extraction of the desired harmonic can be implemented using short/open stubs or several kinds of filters. [3][4][5] However, the use of open/short stubs may limit the operation bandwidth as well as greatly enlarge the chip size at lower frequency range such as the K band.…”

Section: Introductionmentioning

confidence: 99%

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A K‐band self‐biased sextupler with enhanced harmonic suppression using quasi‐lumped bandpass filters

Tian

Chen

Jiang

et al. 2019

Micro & Optical Tech Letters

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A K‐band harmonic suppression enhanced sextupler with a chip dimension of 3 × 1 mm2 using the 0.13 μm GaAs MHEMT process is presented. The configuration of the sextupler consists of two transistors and two quasi‐lumped bandpass filters. From the measured results, the conversion loss of the sextupler is 3‐7 dB from the frequency range of 20.6‐26.3 GHz without any additional amplifier. The fourth harmonic, fifth harmonic, seventh harmonic, eighth harmonic, and ninth harmonic show rejection over 28‐60, 34‐43, 12‐41, 25‐65, and 20‐49 dBc, respectively.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A K‐band self‐biased sextupler with enhanced harmonic suppression using quasi‐lumped bandpass filters

Tian

Chen

Jiang

et al. 2019

Micro & Optical Tech Letters

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K band class‐C MESFET based frequency quadrupler with highly selective SIW bandpass filter for inter satellite communication

R.N.Patel

Patel

2016

Micro & Optical Tech Letters

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This article presents the single stage active frequency quadrupler design for generating a tone in the K band (23.5 GHz) frequency range using GaAs MESFET device. Harmonics current generation characteristics of GaAs MESFET (NE900000) is modeled and analyzed in reference with gate voltage. Based on this, its optimum operating class‐C is decided for its application as a frequency quadrupler. Using this model and introducing resonator (Idler) based harmonic rejection techniques, a narrowband −0.310 dBm output power ×4 frequency multiplier from C‐band to K‐band implemented using 0.5 μm GaAs MESFET. As the device operated in class‐C operating condition, it produces harmonics content due to clipping of output signal. At the output of the proposed multiplier design, a highly selective surface integrated waveguide (SIW) based bandpass filter (with Q is better than 120) is attached, which provides excellent rejection of fundamental component (>90 dBc) and other harmonics assuring minimum rejection of 30 dBc. The proposed design consumes 60 mW power and provides ∼−7 dB conversion gain with input power having 7 dBm. Feasibility and layout geometry of the proposed design has been evaluated and simulated on the substrate RT‐Duroid5880 using Agilent ADS software. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:767–776, 2016

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A high-speed power detector MMIC for E-band communication

Huang¹,

Hu²,

Zhang³

2017

J. Semicond.

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An E-band high speed power detector MMIC using pHEMT technology has been designed, manufactured and experimentally characterized. By employing a 4-way quadrature structure for phase cancellation, the first, second and third harmonics can be suppressed and the ripple at the output is minimized. Compared to conventional topology with a low pass filter, a short response time and high speed performance of demodulation can be reached. Simulated results indicate that the detector is capable of demodulating an on-off keying signal at a data rate up to 5 Gbps. The fabricated chip occupies 1 × 1.5 mm2 and the on-wafer measurement shows a return loss of less than –15 dB, responsivity better than 700 mV/mW and dynamic range of more than 25 dB over 70 to 90 GHz.

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A W-Band Traveling-Wave Frequency Doubler With Output Power of 9 dBm and Power Efficiency of 11.2%

Cited by 14 publications

References 7 publications

A K‐band self‐biased sextupler with enhanced harmonic suppression using quasi‐lumped bandpass filters

A K‐band self‐biased sextupler with enhanced harmonic suppression using quasi‐lumped bandpass filters

K band class‐C MESFET based frequency quadrupler with highly selective SIW bandpass filter for inter satellite communication

A high-speed power detector MMIC for E-band communication

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