A W-Band (75 to 110 GHz) Broadband Microstrip Phase Shifter

Abstract

This paper presents the design and performance of a W-band wideband microstrip 11.25-degree, 1-bit phase shifter using PIN diodes and loaded line technique. State-of-the-art results of 0.9± 0.5 dB insertion loss and ±1.3-degree phase error over the 79 to 92-GHz range have been achieved. Only 1.5 mA per diode and 0 V are required in the forward and reverse bias states, respectively, for optimum insertion losses. These results demonstrate a significant advance in the millimeter-wave phased array technology.

p‐i‐n diode phase shifter in waveguide structure

“…The p-i-n diodes consume less power in control circuits and have less weight and smaller size. We have referenced the papers that comprise the fundamental concepts of the p-i-n diode application and mainly have been published 20 years ago [1][2][3][4][5][6][7][8][9][10]. However, interest in p-i-n diodes, particularly with regard to production technology, continues to develop uninterruptedly and exists at the present time [11][12][13].…”

“…The goal of this article is the design of waveguide phase shifter for the Ka‐band. For the declared frequency range, the waveguide line is preferable . The advantage of waveguide phase shifters in comparison with monolithic devices is significantly higher power and lower insertion loss level.…”