A W-Band 4-Bit Phase Shifter in Multilayer Scalable Array Systems

Shih, Sean; Duan, D.-W.; Fordham, O.; Tornquist, K.; Zeng, Xiandong; Chang‐Chien, P.; Tsai, R.

doi:10.1109/csics07.2007.20

Cited by 15 publications

(10 citation statements)

References 8 publications

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“…Each single bit occupies an area of 1 mm x 0.85 mm, which is dominated by the Lange coupler. These results are comparable with previously reported W-band reflective GaAs HEMT phase shifters [9,10].…”

Section: W-band Receiver Componentssupporting

confidence: 93%

W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology

Margomenos

Kurdoghlian

Micovic

et al. 2014

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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We report the first W-band GaN receiver components using a next generation, highly scaled GaN device technology. This technology (40nm, f T = 220 GHz, f max = 400 GHz, V brk > 40V) enables receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability. This paper includes results for a 4 and a 5 stage low noise amplifier (LNA) (gain over 5 dB/stage at 110 GHz), a single-pole single-throw (SPST) and a single-pole double-throw (SPDT) switch with loss of 0.9 dB and 1.3 dB respectively and a reflective type phase shifter.

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Section: W-band Receiver Componentssupporting

confidence: 93%

W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology

Margomenos

Kurdoghlian

Micovic

et al. 2014

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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“…The maximum FOM was measured around 1018/dB at a frequency around 107.4 GHz. Its phase shift is larger than the one of designs [1,4,7,9,12,13]. It is important to note here that the maximum phase variation (4948) of the phase shifter appears as expected at a lower frequency of 97 GHz (as for the corresponding triple-ridge transmission-type phase shifter).…”

Section: B) Triple-ridge Reflective-type Phase Shiftermentioning

confidence: 64%

“…Figure 17 shows the measured RF frequency response in terms of loss and reflection phase variation for a frequency band between 85 GHz and 110 GHz, which was evaluated using the same MEMS chip and sets of biasing states as in Fig. 14. The triple-ridge transmission-type phase shifter shows the lowest dissipated power at its nominal frequency and outperforms designs [4,9,12,13] in terms of FOM and minimum number of tuning elements. At this frequency, the output reflection phase varies between 08 and 3778 and the loss is always better than 3.74 dB.…”

Section: B) Triple-ridge Reflective-type Phase Shiftermentioning

confidence: 97%

“…Topologies presented in the literature are typically based on switched true-time delay-lines (TTD) or periodically capacitive-loaded transmission lines distributed MEMS transmission line (DMTL) [1, 2]. Microelectromechanical systems (MEMS) are utilized as tuning elements due to their advantages toward low insertion loss (IL) and high linearity when compared with solid-state technologies [3, 4]. In [1], Stehle et al demonstrated a 3-bit TTD phase shifter with a maximum phase shift of 360° and an IL of 5.7 dB at 76.5 GHz (63.2°/dB).…”

Section: Introductionmentioning

confidence: 99%

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Continuously variable W-band phase shifters based on MEMS-actuated conductive fingers

Psychogiou

Hesselbarth

et al. 2013

Int. J. Microw. Wireless Technol.

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This paper presents four continuously variable W-band phase shifters in terms of design, fabrication, and radiofrequency (RF) characterization. They are based on low-loss ridge waveguide resonators tuned by electrostatically actuated highly conductive rigid fingers with measured variable deflection between 0.38 and 8.258 (at a control voltage of 0-27.5 V). A transmission-type phase shifter based on a tunable highly coupled resonator has been manufactured and measured. It shows a maximum figure of merit (FOM) of 19.58/dB and a transmission phase variation of 708 at 98.4 GHz. The FOM and the transmission phase shift are increased to 558/dB and 1348, respectively, by the effective coupling of two tunable resonances at the same device with a single tuning element. The FOM can be further improved for a tunable reflective-type phase shifter, consisting of a transmission-type phase shifter in series with a passive resonator and a waveguide short. Such a reflective-type phase shifter has been built and tested. It shows a maximum FOM of 1018/dB at 107.4 GHz. Here, the maximum phase shift varied between 08 and 3778 for fingers deflections between 0.38 and 8.258.

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“…Besides they provide with a discrete phase shift only, and of no more than 4.25 bits at frequencies above 60 GHz, e.g. [1][2][3], which restricts their usability. Using materials with controllable parameters (e.g.…”

Section: Introductionmentioning

confidence: 99%

Analog-type millimeter-wave phase shifters based on MEMS tunable high-impedance surface and dielectric rod waveguide

Chicherin

Sterner

Lioubtchenko

et al. 2011

Int. J. Microw. Wireless Technol.

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and antti v. ra ¤isa ¤nen 1 Millimeter-wave phase shifters are important components for a wide scope of applications. An analog-type phase shifter for W-band has been designed, analyzed, fabricated, and measured. The phase shifter consists of a reconfigurable highimpedance surface (HIS) controlled by micro-electromechanical system (MEMS) varactors and placed adjacent to a silicon dielectric rod waveguide. The analog-type phase shift in the range of 0-328 is observed at 75 GHz whereas applying bias voltage from 0 to 40 V to the MEMS varactors. The insertion loss of the MEMS tunable HIS is between 1.7 and 5 dB, depending on the frequency. I . I N T R O D U C T I O NMillimeter-wave phase shifters are important components for a wide scope of applications such as automotive radars, highcapacity communication systems, satellite communication, etc. Existing millimeter-wave phase shifters change the phase by adjusting either the geometrical parameters of the device (e.g. changing the length of a transmission line using switches), or material properties of its components (e.g. by applying magnetic or electric field). Phase shifters based on switched networks and distributed transmission lines may be inconvenient, e.g. in phased arrays due to their relatively large size. Besides they provide with a discrete phase shift only, and of no more than 4.25 bits at frequencies above 60 GHz, e.g. [1-3], which restricts their usability. Using materials with controllable parameters (e.g. ferroelectrics) for phase shifter usually results in high insertion loss at millimeter wavelength frequencies, e.g. 10 dB for a continuous phase shift up to 2208 at 60 GHz [4]. That is why we propose an approach that combines micro-electromechanical systems (MEMS) fabrication technology with the concept of artificial electromagnetic surfaces for realization of analogtype millimeter-wave phase shifters. MEMS technology allows one to miniaturize electronic components, reduce their cost in batch production, and effectively compete with semiconductor and ferroelectric technology in terms of losses. Combined with the artificial electromagnetic surfaces, MEMS varactors enable tunability of unique engineered properties of these surfaces. Previously, we proposed the design of a novel MEMS tunable high-impedance surface (HIS), analyzed its electromagnetic properties analytically and numerically, studied possible applications, and fabricated and measured several non-tunable prototypes, as well as tunable MEMS capacitors [5][6][7][8][9][10][11][12]. In this work we present for the first time the measurement results of the MEMS-based HIS that is tunable in an analog way and is employed in an analog-type phase shifter. I I . M E M S T U N A B L E H I SConventional HIS [13] consists of a capacitive twodimensional periodic grid of electrically small metal patches placed on a thin dielectric substrate with a ground plane. As the period of the structure is much smaller than the wavelength of the field above it, an effective surface impedance model can be used to an...

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A W-Band 4-Bit Phase Shifter in Multilayer Scalable Array Systems

Cited by 15 publications

References 8 publications

W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology

W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology

Continuously variable W-band phase shifters based on MEMS-actuated conductive fingers

Analog-type millimeter-wave phase shifters based on MEMS tunable high-impedance surface and dielectric rod waveguide

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