Ku frequency band extends from 12 to 18 GHz and is mostly used for satellite communication. Because of the higher frequency, smaller dish antennas can be deployed to receive the signals, and antennas array can be used to increased directivity, power, gain, and to maximize the signal to interference plus noise ratio (SINR). Ku band also provides flexibility to the users as it has a smaller dish size, so it offers a cheaper and focused beam. As compared to Ka band operations, Ku band suffers less rain fade.There are various active devices like MESFET, MOSFET, HEMT, etc., which are used for amplifier designing and each active device has some advantages and disadvantages. High electron mobility transistor (HEMTs) is one of the most preferred choices because these devices can operate over high frequencies. GaN HEMTs have high gain and high PAE. This reduces DC power consumption in the circuit, and hence, circuit size and designing cost are reduced because of the reduced heat dissipation circuit for the amplifier [1,2].GaN HEMTs have high operating voltage, so it helps to obtain the high power delivered in the load [1]. For designing an amplifier, it is very important to know the specification of the active device. There are many parameters like gain, power, PAE, operating voltages and frequencies which are dependent on the active device [3]. For linearity and efficiency, we can switch among various amplifier classes like A, B, AB, C, F and inverse class-F. Class A amplifier is linear, but efficiency is only 50%.