A virtual interface method for extracting growth rates and high temperature optical constants from thin semiconductor films using <i>in</i> <i>situ</i> normal incidence reflectance

Breiland, William G.; Killeen, Kevin

doi:10.1063/1.360496

Cited by 153 publications

(114 citation statements)

References 54 publications

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“…A method called ADVISOR (for Analysis of Deposition using Virtual Interfaces and Spectroscopic Optical Reflectance) has been developed to extract growth rates and optical constants from growing thin films. [23] The method does not require any prior knowledge of the optical properties of the thin film, so it is well-suited to the potentially unknown sulfidation films that grow on copper. The ADVISOR analysis is performed on reflectance data using a computer application that automatically determines growth rate and optical constants over an arbitrary reflectance data segment.…”

Section: Normal Incidence Reflectance Experimentsmentioning

confidence: 99%

Mechanisms of Atmospheric Copper Sulfidation and Evaluation of Parallel Experimentation Techniques

Barbour¹,

Sullivan²,

Campin³

et al. 2002

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A physics-based understanding of material aging mechanisms helps to increase reliability when predicting the lifetime of mechanical and electrical components. This report examines in detail the mechanisms of atmospheric copper sulfidation and evaluates new methods of parallel experimentation for high-throughput corrosion analysis. Often our knowledge of aging mechanisms is limited because coupled chemical reactions and physical processes are involved that depend on complex interactions with the environment and component functionality. Atmospheric corrosion is one of the most complex aging phenomena and it has profound consequences for the nation's economy and safety. Therefore, copper sulfidation was used as a test-case to examine the utility of parallel experimentation. Through the use of parallel and conventional experimentation, we measured: (1) the sulfidation rate as a function of humidity, light, temperature and O 2 concentration; (2) the primary moving species in solid state transport; (3) the diffusivity of Cu vacancies through Cu 2 S; (4) the sulfidation activation energies as a function of relative humidity (RH); (5) the sulfidation induction times at low humidities; and (6) the effect of light on the sulfidation rate. Also, the importance of various sulfidation mechanisms was determined as a function of RH and sulfide thickness. Different models for sulfidation-reactor geometries and the sulfidation reaction process are presented.

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Section: Normal Incidence Reflectance Experimentsmentioning

confidence: 99%

Mechanisms of Atmospheric Copper Sulfidation and Evaluation of Parallel Experimentation Techniques

Barbour¹,

Sullivan²,

Campin³

et al. 2002

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“…In-situ optical reflectance monitoring is a method from which both optical constants and growth rates may be simultaneously extracted from the normal incidence reflectance of a growing thin film [12]. In addition to the optical constants and growth rates, this method is routinely used to measure and control the nucleation layer thickness in GaN, as well as the transition from 3D island growth to 2D coalesced planar growth.…”

Section: In-situ Reflectance Monitoringmentioning

confidence: 99%

Defect reduction in gallium nitride using cantilever epitaxy.

Mitchell¹

2003

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Cantilever epitaxy (CE) has been developed to produce GaN on sapphire with low dislocation densities as needed for improved devices. The basic mechanism of seeding growth on sapphire mesas and lateral growth of cantilevers until they coalesce has been modified with an initial growth step at 950°C. This step produces a gable with ) 2 2 11 ( facets over the mesas, which turns threading dislocations from vertical to horizontal in order to reduce the local density above mesas. This technique has produced material with densities as low as 2-3x10 7 /cm 2 averaged across extended areas of GaN on sapphire, as determined with AFM, TEM and cathodoluminescence (CL). This density is about two orders of magnitude below that of conventional planar growths; these improvements suggest that locating wide-area devices across both cantilever and mesa regions is possible. However, the first implementation of this technique also produced a new defect: cracks at cantilever coalescences with associated arrays of lateral dislocations. These defects have been labeled "dark-block defects" because they are non-radiative and appear as dark rectangles in CL images. Material has been grown that does not have dark-block defects. Examination of the evolution of the cantilever films for many growths, both partial and complete, indicates that producing a film without these defects requires careful control of growth conditions and crystal morphology at multiple steps. Their elimination enhances optical emission and uniformity over large (mm) size areas. ACKNOWLEDGMENTS

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“…Spectral reflectance [50][51][52], surface photoabsorption spectroscopy [53,54], and reflectance difference spectroscopy [55,56] have been used to monitor growth rate, alloy composition, Sb surface segregation, interfacial layers, doping levels, and desorption of surface oxides. Spectral reflectance was adapted from systems used for in-situ monitoring of As-and P-based materials [57], but because of the smaller bandgap of the GaSbbased alloys, absorption by the optical probe can be significant. Therefore for spectral 8 reflectance monitoring, wavelengths longer than about ~750 nm are necessary to determine growth rate and optical constants from classical Fabry-Perot interference oscillations [50].…”

Section: In-situ Diagnosticsmentioning

confidence: 99%

“…A variety of optical techniques exist for probing OMVPE growth, each sensitive to different parameters of interest [45,[48][49][50][51][52][53][54][55][56][57]. Fourier transform infrared spectroscopy (FTIR) [45] and ultraviolet spectroscopy [48,49] were used to monitor the gas phase concentration of precursors.…”

Section: In-situ Diagnosticsmentioning

confidence: 99%

Progress and Continuing Challenges in GaSb-based III-V Alloys and Heterostructures Grown by Organometallic Vapor Phase Epitaxy

2004

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This paper discusses progress in the preparation of mid-IR GaSb-based III-V materials grown by organometallic vapor phase epitaxy (OMVPE). The growth of these materials is complex, and fundamental and practical issues associated with their growth are outlined. Approaches that have been explored to further improve the properties and performance are briefly reviewed.Recent materials and device results on GaInAsSb bulk layers and GaInAsSb/AlGaAsSb heterostructures, grown lattice matched to GaSb, are presented. State-of-the-art GaInAsSb materials and thermophotovoltaic devices have been achieved. This progress establishes the high potential of OMVPE for mid-IR GaSb-based devices. 2 IntroductionGaSb-based III-V semiconductor alloys are attractive for optoelectronic devices such as midinfrared lasers, detectors, and thermophotovoltaics (TPVs); and electronic devices such as highspeed transistors and resonant-tunneling diodes [1]. Alloys of particular interest are based on the binaries GaSb, AlSb, InSb, GaAs, AlAs, and InAs. As shown in Fig. 1 GaSb-based heterostructures have been successfully grown by all of the major epitaxial techniques, including liquid phase epitaxy, molecular beam epitaxy (MBE), and organometallic vapor phase epitaxy (OMVPE). While each of these technologies must contend with numerous challenges that are specific to the method of choice, several fundamental issues related to Sbcontaining III-V alloys exist. These include the low volatility of Sb compared to P-and Asbased alloys, which necessitates stringent control of V/III ratio; the requirement to use low growth temperatures (450 to 600 °C); the existence of a large solid phase miscibility gap for many Sb-containing alloys; and the affinity of AlSb-based alloys to incorporate O and C. As a consequence, growth of Sb-based alloys differs significantly from the more conventional As-and P-based materials, which certainly has made the development of the GaSb-based materials and devices very challenging.This paper discusses both the fundamental and practical issues associated with the growth of mid-IR GaSb-based III-V alloys grown by OMVPE, and briefly reviews approaches that have been explored to further improve the properties and performance of bulk layers as well as heterostructures. Growth considerations include the importance of suitable organometallic precursors and control of V/III ratio; miscibility gaps in ternary and quaternary alloys; C and O contamination in AlSb-based alloys; in-situ monitoring; GaSb substrate quality and preparation;and heterostructure growth. Recent materials and device results are limited to GaInAsSb and 3 AlGaAsSb alloys grown lattice matched to GaSb, since two comprehensive reviews on OMVPE growth of Sb-based materials were recently published [5,6]. Growth considerations and brief review of previous work Fundamental differences between Sb-based and P-or As-based III-V alloysOne of the early premises of OMVPE growth of III-V semiconductors was the utilization of precursors based on group III organometallics a...

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A virtual interface method for extracting growth rates and high temperature optical constants from thin semiconductor films using in situ normal incidence reflectance

Cited by 153 publications

References 54 publications

Mechanisms of Atmospheric Copper Sulfidation and Evaluation of Parallel Experimentation Techniques

Mechanisms of Atmospheric Copper Sulfidation and Evaluation of Parallel Experimentation Techniques

Defect reduction in gallium nitride using cantilever epitaxy.

Progress and Continuing Challenges in GaSb-based III-V Alloys and Heterostructures Grown by Organometallic Vapor Phase Epitaxy

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