A violet emission in ZnS:Mn,Eu: Luminescence and applications for radiation detection

Abstract

Articles you may be interested inTunable emission in surface passivated Mn-ZnS nanophosphors and its application for Glucose sensing AIP Advances 2, 012183 (2012); 10.1063/1.3698310Temperature and pressure behavior of the emission bands from Mn-, Cu-, and Eu-doped ZnS nanocrystalsWe prepared manganese and europium co-doped zinc sulfide (ZnS:Mn,Eu) phosphors and used them for radiation detection. In addition to the red fluorescence at 583 nm due to the d-d transition of Mn ions, an intense violet emission at 420 nm is newly observed in ZnS:Mn,Eu phosphors. The emission is related to Eu 2þ doping but only appears at certain Eu 2þ concentrations. It is found that the intensity of the 420 nm violet fluorescence is X-ray does-dependent, while the red fluorescence of 583 nm is not. The ratio of fluorescence intensities at 420 nm and 583 nm has been monitored as a function of X-ray doses that exposed upon the ZnS:Mn,Eu phosphors. Empirical formulas are provided to estimate the doses of applied X-ray irradiation. Finally, possible mechanisms of X-ray irradiation induced fluorescence quenching are discussed. The intense 420 nm emission not only provides a violet light for solid state lighting but also offers a very sensitive method for radiation detection. V C 2014 AIP Publishing LLC. [http://dx.

Luminescence- and nanoparticle-mediated increase of light absorption by photoreceptor cells: Converting UV light to visible light

“…1A ,B). They are cost-effective, easy to synthesize, and readily embedded or coated onto glasses 7 8 9 . When illuminated by a UV light source, they convert UV light to narrow-band green or red light, or wide-spectrum white light ( Fig.…”

Eu2+‐induced enhancement of defect luminescence of ZnS

“…ZnS is an excellent luminescence host material and, frequently, transition and rare‐earth (RE) metal impurities are doped in the ZnS host to obtain impure luminescence. In recent years, however, it has been reported that doping of transition and RE metal impurities can greatly enhance the luminescence intensity of ZnS materials . For example, Yang et al reported that emission intensities increased by about five to six times in ZnS nanocrystallites after doping with Ce, Y, Nd, Er and Tb metal ions .…”

“…Sridevi et al reported that the fluorescence intensities of ZnS nanoparticles, doped with La, Mn, Co. and Ni metal ions, were five to six times that of pure ZnS . Importantly, it has been reported more recently that doping of Eu 2 + can increase the luminescence of ZnS materials . Ashwini et al reported that the luminescence intensity in ZnS:Eu 2 + nanoparticles was enhanced with increasing doping concentrations of Eu 2 + .…”

“…The reason for this increase is ascribed to an increase in defect sites and traps with the increasing number of Eu 2 + ions doped into ZnS nanoparticles . Ma et al reported that doping with Eu 2 + promoted the emission intensity of bulk ZnS phosphors by 7–30 times, explained as the formation of Eu 2 + ‐related defects . In short, luminescence enhancement in the Eu 2 + ‐doped ZnS materials is ascribed to the introduction of defects and traps .…”

Absorption enhancement in thin-film photoluminescence layers with metal nanoparticles inter-coupling engineering

“…Intense emission from ZnS layer not only is used for solid state lighting but also offers a very sensitive method for radiation detection [8]. Hence, the importance of excitation enhancement in PL layers is highlighted.…”