A vibrational study of borazine adsorbed on Pt(111) and Au(111) surfaces

Simonson, Robert J; Paffett, Mark T.; Jones, Mark; Koel, Bruce E.

doi:10.1016/0039-6028(91)90635-6

Cited by 30 publications

(37 citation statements)

References 16 publications

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“…Taking into account that in specular geometry only modes having a dynamic dipole component perpendicular to the substrate surface are allowed we can conclude in this case that due to a very strong contribution of the in-plane modes (E ) a significant part of the molecules are oriented on the surface perpendicular or at least in slightly tilted position. This behaviour is similar to the results detected on Pt (1 1 1) surface, at the same time it is in contrast with the results observed on Au(1 1 1) surface, where "flat" orientation geometry occurred [11].…”

Section: Hreels Resultssupporting

confidence: 88%

“…The remaining two main loss peaks are attributed to the phonons with in-plane polarization; the higher energy peak originates from the longitudinal optical (LO) phonon, and the lower energy one from the transverse optical phonon (see Table 2). The observed HREEL spectra at 1100 K correspond well to the literature data on hexagonal boron nitride layer (h-BN) [11]. Taking into account that in specular geometry only modes having a dynamic dipole component perpendicular to the substrate surface are allowed we can conclude in this case that due to a very strong contribution of the in-plane modes (E ) a significant part of the molecules are oriented on the surface perpendicular or at least in slightly tilted position.…”

Section: Hreels Resultssupporting

confidence: 86%

“…3A). At 140 K there were loss peaks at 410, 720, 920, 1050, 1460, 2510, 2980 and at 3480 cm −1 which correspond well to the gas phase IR spectra of borazine [11]. The vibrational modes of borazine and their assignations are collected in Table 1.…”

Section: Hreels Resultsmentioning

confidence: 52%

“…Borazine desorbed from the surface with one sharp peak at T p = 176 K, which is definitely connected to the desorption of the condensed adsorbate overlayer with zero order desorption kinetics (exposure dependence spectra not shown). Koel and co-workers found that on Pt(1 1 1) surface the exposure of 0.03 L borazine saturated the first chemisorbed layer and at larger doses a borazine multilayer was formed [11]. In AES measurements we observed that 0.15 L exposure of borazine gives a ∼0.12 B/Rh peak to peak atomic ratio at 300 K (at saturation) which is in good agreement with the value observed after annealing the condensed layer of borazine to RT.…”

Section: Borazine Adsorption On Rh(1 1 1) By Aes and Tpdmentioning

confidence: 99%

“…therein]. However, very few works deal with the chemistry of precursor molecules during the preparation steps of boron nitride overlayer [7,10,11]. Koel and co-workers investigated the adsorption of borazine on Au(1 1 1) and Pt(1 1 1) single crystal surfaces by electron spectroscopic methods [11], nevertheless to our best knowledge there is no similar work on Rh(1 1 1) surface until now.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of the adsorption properties of borazine and characterisation of boron nitride on Rh(1 1 1) by electron spectroscopic methods

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Section: Hreels Resultssupporting

confidence: 88%

Section: Hreels Resultssupporting

confidence: 86%

Section: Hreels Resultsmentioning

confidence: 52%

Section: Borazine Adsorption On Rh(1 1 1) By Aes and Tpdmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Nanopatterning Technologies of 2D Materials for Integrated Electronic and Optoelectronic Devices

et al. 2022

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With the reduction of feature size and increase of integration density, traditional 3D semiconductors are unable to meet the future requirements of chip integration. The current semiconductor fabrication technologies are approaching their physical limits based on Moore's law. 2D materials such as graphene, transitional metal dichalcogenides, etc., are of great promise for future memory, logic, and photonic devices due to their unique and excellent properties. To prompt 2D materials and devices from the laboratory research stage to the industrial integrated circuit‐level, it is necessary to develop advanced nanopatterning methods to obtain high‐quality, wafer‐scale, and patterned 2D products. Herein, the recent development of nanopatterning technologies, particularly toward realizing large‐scale practical application of 2D materials is reviewed. Based on the technological progress, the unique requirement and advances of the 2D integration process for logic, memory, and optoelectronic devices are further summarized. Finally, the opportunities and challenges of nanopatterning technologies of 2D materials for future integrated chip devices are prospected.

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A Review of Scalable Hexagonal Boron Nitride (h‐BN) Synthesis for Present and Future Applications

2022

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Ga-N, In-P, etc. Crystalline BN has typically been perceived as a purely synthetic material, [1] however geological findings provide evidence of structures similar to BN in rocks. [2] BN exhibits several stable crystal forms (see Figure 1A), for example, i) sp 3 bonded cubic and wurtzite forms; and ii) sp 2 bonded hexagonal and rhombohedral forms. [3] The cubic BN (c-BN) form has "zincblende" type crystal structure consisting of overlapping fcc cubic lattices consisting of B and N atoms. The c-BN crystal structure is analogous to that of diamond. The wurtzite form of BN (w-BN) is also sp 3 bonded like c-BN, however the wurtzite form consists of a hexagonal lattice with each ring sitting in a boat configuration. The w-BN crystal structure is analogous to that of the rare lonsdaleite, a carbon allotrope formed from graphite under immense heat and pressure. [4] Hexagonal boron nitride (h-BN) is a layered hexagonal crystal (a = 2.505 Å and c = 6.653 Å) belonging to the P6 3 /mmc space group with a structure analogous to that of graphite. [11,12] Alternating B and N atoms are sp 2 bonded in-plane to form a hexagonal lattice and several such layers are stacked to form the bulk h-BN crystal (Figure 1B). [11,12] The BN sp 2 bonding results in strong in-plane σ bonds leading to high in-plane thermal conductivity, chemical stability and strength, while empty π orbitals make h-BN electrically insulating (bandgap ≈ 5.955 eV). [3,13] The in-plane BN bonds exhibit ionic behavior due to the stronger electronegativity of the N atoms and results in layer to layer interactions between h-BN layers leading to AA′ stacking configuration, that is, each N atom in one layer is directly above the B atoms of the next layer (Figure 1B). [14] In addition to AA′ stacking, AB stacking (Bernal stacking) has also been occasionally observed in thin h-BN films even though this is a higher energy configuration. [15,5] Finally, BN is also observed in rhombohedral form (r-BN). Each layer of r-BN is the same crystal structure as that of h-BN (Figure 1A), however r-BN follows an ABC stacking configuration whereby boron still sits atop nitrogen atoms, except layers are offset such that the 1 and 3 atoms (N and N for example) sit atop the 4 and 6 atoms (B and B in this example) of the ring below. [3] Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-qual...

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A vibrational study of borazine adsorbed on Pt(111) and Au(111) surfaces

Cited by 30 publications

References 16 publications

Investigation of the adsorption properties of borazine and characterisation of boron nitride on Rh(1 1 1) by electron spectroscopic methods

Investigation of the adsorption properties of borazine and characterisation of boron nitride on Rh(1 1 1) by electron spectroscopic methods

Nanopatterning Technologies of 2D Materials for Integrated Electronic and Optoelectronic Devices

A Review of Scalable Hexagonal Boron Nitride (h‐BN) Synthesis for Present and Future Applications

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