A vertical current regulator diode with trench cathode based on double epitaxial layers for LED lighting

An AlGaN/GaN Lateral Bidirectional Current-Regulating Diode with Two Symmetrical Hybrid Ohmic-Schottky Structures

“…As stated above, the proposed AlGaN/GaN lateral B-CRD was able to deliver an excellent steady current in not only the forward conduction state, but also the reverse conduction state. Furthermore, compared with the CRD in [ 5 , 6 ], the proposed AlGaN/GaN lateral B-CRD delivered a steadier current even with the applied voltage spanning a large range of 0–200 V. Additionally, the knee voltage of the proposed AlGaN/GaN lateral B-CRD was about 0.6 V, which was much lower than that of the CRD in [ 5 , 6 ] (about 3 V). Such a new functionality combined with the excellent performance may make the proposed AlGaN/GaN lateral B-CRD attractive in some special fields, where a bidirectional current-limiting function is needed.…”

“…The AlGaN/GaN high electron mobility transistor (HEMT) and metal-insulator-semiconductor HEMT (MIS-HEMT) are the most studied GaN-based power transistors, due to their high breakdown voltage, high switching frequency, low specific on-resistance, and especially the polarization-induced high-mobility and high-density two-dimensional electron gases (2DEG) within the AlGaN/GaN heterointerface [ 2 ]. Meanwhile, two-terminal power electronics are also indispensable components in a power electronic system, such as AlGaN/GaN lateral Schottky barrier diodes [ 3 ], AlGaN/GaN lateral field-effect rectifiers [ 4 ] and current-regulating diodes (CRD) [ 5 , 6 ]. Similar to the constant-current source based on integrated circuits, CRDs capable of providing a unidirectional invariant current are widely used in many power electronic systems, such as light emitting diode (LED) lighting systems and current-source systems for piezoelectric actuators.…”