Over the last years, there is an increasing need to know and characterize the non linear behaviour of most high frequency semiconductor devices. For that, a new and original automatic active Load-Pull system based on a Large Signal network Analyzer is presented which allows to carry out an accurate non linear characterization with very high load reflection coefficient (more than 0.96) under microwaves probes. After describing the setup and the calibration procedure, a dedicated study has been performed in order to validate the active load-pull system and to know and evaluate the good accuracy of non linear measurements. At non linear model of AlGaN/GaN HEMT device has been established in order to compare measurements and simulations.