GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369)
DOI: 10.1109/gaas.1999.803740
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A V-band drain injected/resistive dual-mode monolithic mixer

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Cited by 4 publications
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“…It provides a virtual ground by adding a balun to each port, so that all ports are mutually isolated. Furthermore, by using resistive FETs to realize DBM [ 13 ], the demand for LO power can be effectively reduced [ 15 , 16 ], which is also important for large-scale array applications to reduce power consumption. But relatively speaking, the design difficulty is increased, requiring additional bias on the gate of each FET.…”
Section: Coupling Effect Solution and Integrated Receiver Mmic Designmentioning
confidence: 99%
“…It provides a virtual ground by adding a balun to each port, so that all ports are mutually isolated. Furthermore, by using resistive FETs to realize DBM [ 13 ], the demand for LO power can be effectively reduced [ 15 , 16 ], which is also important for large-scale array applications to reduce power consumption. But relatively speaking, the design difficulty is increased, requiring additional bias on the gate of each FET.…”
Section: Coupling Effect Solution and Integrated Receiver Mmic Designmentioning
confidence: 99%