A user-optimized electro-thermal IGBT model for power electronic circuit simulation in the circuit simulator ELDO

Fatemizadeh, B.; Tchouangue, Georges; Silber, D.

doi:10.1109/apec.1996.500426

Cited by 7 publications

(2 citation statements)

References 6 publications

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“…The model equations of this approach are based on the device physics, but since exact solutions are not possible or restricted to a few special cases, appropriate mathematical representations are found to approximate the solution [41]- [115].…”

Section: B Approximate Solutionmentioning

confidence: 99%

Status and trends of power semiconductor device models for circuit simulation

Kraus

Mattausch

1998

IEEE Trans. Power Electron.

110

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Abstract-The current status of research in the field of power semiconductor device models is reviewed. For this purpose, the basic modeling problems and research issues, which have to be overcome in this field, are discussed. Recently, some new and quite promising modeling concepts have been proposed, which are compared with more traditional ways of achieving an efficient tradeoff between the necessary accuracy, required simulation speed, and feasibility of parameter determination. From this comparison, a prediction of the future evolution of circuit simulation models for power semiconductor devices naturally emerges. Many of the different concepts are expected to survive only in an application niche, where their specific points of strength are important. However, three modeling concepts have already been proven to be successfully applicable to the complete spectrum of power semiconductor devices and have their strength for different grades of complexity of the power circuit. A revolutionary development from anticipated or longdue breakthroughs is on the other hand not expected in the foreseeable future.

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Section: B Approximate Solutionmentioning

confidence: 99%

Status and trends of power semiconductor device models for circuit simulation

Kraus

Mattausch

1998

IEEE Trans. Power Electron.

110

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“…Hefner's model and a model list based on the Hefner work are examples of suitable mathematical models for circuit simulator implementation, which have proved to have a good accuracy and high reliability [3][4][5]. In [6,7], the authors have proposed a complete and complex mathematical model using a complex equation for each model part, including the wide-base PNP section, the MOSFET channel section, capacities, the JFET effect, and the thermal effect. e difference between the analytical models is in the simplifications made in order to reduce the simulation time.…”

Section: Introductionmentioning

confidence: 99%

SIMSCAPE Electrical Modelling of the IGBT with Parameter Optimization Using Genetic Algorithm

Baghdadi

Elwarraki

Mijlad

et al. 2021

Journal of Electrical and Computer Engineering

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The concept introduced by MathWorks in the Simscape product is the link representation between the SIMSCAPE library components that correspond to physical connections transmitting power. In this paper, a power insulated-gate bipolar transistor (IGBT) model using MATLAB graphical software is reproduced. An electrical IGBT behavior model using the Simscape Electronics library components is developed and analyzed. This model is parameterized using the constructor datasheet to ensure a good representation of the dynamic and static IGBT behaviors. An extraction and optimization studies of the IGBT model parameters using a stochastic algorithm implemented in Matlab are presented. The proposed method is based on the Genetic Algorithm (GA) to perfectly extract and optimize the model parameters using the mathematical model circuit equations and the provided datasheet characteristics. A simulation in the Matlab/Simulink environment and a comparison with the experimental results for an IGBT device example are carried out to demonstrate the proposed model accuracy.

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