A useful pyramid scheme

Cava, R. J.

doi:10.1103/physics.4.7

Cited by 9 publications

(10 citation statements)

References 15 publications

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“…The work has experimentally demonstrated the feasibility of a spintronic concept [3][4][5] in which the electronic device characteristics are governed by the staggered magnetization axis in an AFM. It has been shown that the AFM moments can be manipulated via an exchange-coupled ferromagnet (FM) 1,2,6 and that the AFM magnetoresistance signals can persist to room temperature 6 .…”

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confidence: 99%

“…Although a ferromagnetic ground state is rare within magnetic materials derived from semiconductor compounds and their Curie temperatures are below room temperature, high Néel temperature (T N ) AFMs can be found, for example, among the magnetic counterparts of the I-II-V semiconductors (see also Supplementary Table S1 and Supplementary Note 1) 4,5 . The structures of the non-magnetic semiconductors such as LiZnAs, NaZnAs, CuZnAs and AgZnAs are closely related to the III-V zincblende structure, as shown in Fig.…”

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confidence: 99%

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Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

et al. 2013

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Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new hightemperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Néel temperature. Combined with our demonstration of room-temperatureexchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics.

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Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

et al. 2013

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“…78,79 The synthesis of semiconductors with high-temperature ferromagnetic ordering of spins, which would simultaneously enable the conventional tunability of electronic properties and spintronic functionalities, remains a significant challenge. In previous sections we already mentioned examples of metal antiferromagnets which have so far driven much of the research in antiferromagnetic spintronics.…”

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confidence: 99%

Antiferromagnetic spintronics

et al. 2016

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Antiferromagnetic materials are magnetic inside, however, the direction of their ordered microscopic moments alternates between individual atomic sites. The resulting zero net magnetic moment makes magnetism in antiferromagnets invisible on the outside. It also implies that if information was stored in antiferromagnetic moments it would be insensitive to disturbing external magnetic fields, and the antiferromagnetic element would not affect magnetically its neighbors no matter how densely the elements were arranged in a device. The intrinsic high frequencies of antiferromagnetic dynamics represent another property that makes antiferromagnets distinct from ferromagnets. The outstanding question is how to efficiently manipulate and detect the magnetic state of an antiferromagnet. In this article we give an overview of recent works addressing this question. We also review studies looking at merits of antiferromagnetic spintronics from a more general perspective of spin-ransport, magnetization dynamics, and materials research, and give a brief outlook of future research and applications of antiferromagnetic spintronics.Interesting and useless -this was the common perception of antiferromagnets expressed quite explicitly, for example, in the 1970 Nobel lecture of Louis Néel.1 Connecting to this traditional notion we can define antiferromagnetic spintronics as a field that makes antiferromagnets useful and spintronics more interesting. Below we give an overview of this emerging field whose aim is to complement or replace ferromagnets in active components of spintronic devices.We recall some key physics roots of the field and first concepts of spintronic devices based on antiferromagnetic counterparts of the non-relativistic giantmagnetoresistance and spin-transfer-torque phenomena. 2We then focus on electrical reading and writing of information, combined with robust storage, that can be realized in antiferromagnetic memories via relativistic magnetoresistance and spin torque effects.3,4 Related to these topics is the research of spintronic devices in which antiferromagnets act as efficient generators, detectors, and transmitters of spin currents. This will lead us to studies exploring fast dynamics in antiferromagnets 5 and different types of antiferromagnetic materials. They range from insulators to superconductors. Here we comment also on the relation between crystal antiferromagents and synthetic antiferromagnets, with the latter ones playing an important role in spintronic sensor and memory devices.6 In concluding remarks we outline some of the envisaged future directions of research and potential applications of antiferromagnetic spintronics. Equilibrium properties and magnetic storage in antiferromagnetsThe understanding of equilibrium properties of ferromagnets has been guided by the notion of a global molecular field, introduced by Pierre Weiss.1 The theory starts from the Curie law for paramagnets with the inverse susceptibility proportional to temperature, χ −1 ∼ T . It further assumes that the externally ap...

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“…On the other hand, robust AFM ordering occurs much more frequently in nature than FM ordering, particularly in conjunction with semiconducting electronic structure 9,10 . Recent studies have identified several candidate AFM semiconductor materials, ranging from AFM counterparts of common zinc-blende or half-Heusler compound semiconductors [11][12][13][14] to perovskite semiconductor-AFM oxides [15][16][17][18][19] . A particular focus in this materials research has been on the preparation of thin epitaxial films and heterostructures 11,13,18,19 as a prerequisite for the envisaged spintronic devices.…”

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Anisotropic magnetoresistance in an antiferromagnetic semiconductor

et al. 2014

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Recent studies in devices comprising metal antiferromagnets have demonstrated the feasibility of a novel spintronic concept in which spin-dependent phenomena are governed by an antiferromagnet instead of a ferromagnet. Here we report experimental observation of the anisotropic magnetoresistance in an antiferromagnetic semiconductor Sr 2 IrO 4 . Based on ab initio calculations, we associate the origin of the phenomenon with large anisotropies in the relativistic electronic structure. The antiferromagnet film is exchange coupled to a ferromagnet, which allows us to reorient the antiferromagnet spin-axis in applied magnetic fields via the exchange spring effect. We demonstrate that the semiconducting nature of our AFM electrode allows us to perform anisotropic magnetoresistance measurements in the currentperpendicular-to-plane geometry without introducing a tunnel barrier into the stack. Temperature-dependent measurements of the resistance and anisotropic magnetoresistance highlight the large, entangled tunabilities of the ordinary charge and spin-dependent transport in a spintronic device utilizing the antiferromagnet semiconductor.

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A useful pyramid scheme

Cited by 9 publications

References 15 publications

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Antiferromagnetic spintronics

Anisotropic magnetoresistance in an antiferromagnetic semiconductor

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