A unified semi-global surface reaction model of polymer deposition and SiO2 etching in fluorocarbon plasma

Chang, Won Seok; Yook, Yeong Geun; You, Hae Sung; Park, Jae‐Hyeong; Kwon, Deuk Chul; Song, Mi Young; Yoon, Jung Sik; Kim, Dae Woong; You, S. J.; Dong, Yu; Kwon, Hyeokjin; Park, Sung Kye; Im, Yeon-Ho

doi:10.1016/j.apsusc.2020.145975

Cited by 12 publications

(15 citation statements)

References 24 publications

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“…Using FC plasma diagnostics and experimental surface data, we developed a unified semi-global surface reaction model to consider FC deposition and oxide etching in the presence of a steady-state FC passivation layer simultaneously [21], as shown in figure 1(d). In this model, the thickness of the FC passivation layer was determined by the mass balance of the FC species during the plasma etching process.…”

Section: Surface Reaction Model For the Plasma Etching Processmentioning

confidence: 99%

“…For the plasma HAR etching process, the etching process of a composite material comprising a polymer passivation layer and mixed layer must be considered in this simulation. Because it is difficult to account for these surface reaction phenomena with the level set algorithm, we developed a two-layer-based surface reaction model [21,22] and demonstrated how to integrate this model into our simulation platform.…”

Section: Introductionmentioning

confidence: 99%

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Fast and realistic 3D feature profile simulation platform for plasma etching process

Yook¹,

You²,

Park³

et al. 2022

J. Phys. D: Appl. Phys.

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We present a topographic simulation platform that simultaneously considers three-dimensional surface movement, neutral and ion transport, and surface reactions in plasma high-aspect-ratio (HAR) oxide etching. The hash map data structure is considered for an effective 3D level set algorithm with parallelized computations to calculate surface moving speed. Neutral and ion transport within nanoscale semiconductor geometry is parallelized with a graphics processing unit (GPU) so that the speedup ratio as compared to a single central processing unit (CPU) is approximately 200. The surface reaction based on a two-layer model was incorporated into a 3D feature profile simulation platform with CPU parallelization. Finally, our simulation platform demonstrates that adaptive surface meshing can drastically decrease the computational load with a parallelized numerical platform.

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Section: Surface Reaction Model For the Plasma Etching Processmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fast and realistic 3D feature profile simulation platform for plasma etching process

Yook¹,

You²,

Park³

et al. 2022

J. Phys. D: Appl. Phys.

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“…Gas mixtures with Br and Cl have been studied for SiO 2 etching to overcome the disadvantage of isotropic etching from the use of F-containing precursors such as SF 6 [ 3 ]. Perfluorocarbon (PFC) gases such as CF 4 and C 4 F 8 are widely used owing to their characteristic behaviors that improve the etch selectivity of SiO 2 over other materials including Si and Si 3 N 4 , as well as their achievement of etch anisotropy by forming fluorocarbon (FC) films on the surface of SiO 2 trench sidewalls [ 4 ]. Although there have been numerous reports on the development of alternative precursors to the conventional PFC gases due to their high global warming potential [ 5 , 6 , 7 , 8 ], the conventional PFC gases such as C 4 F 8 still remain indispensable in plasma SiO 2 etching for denser patterning.…”

Section: Introductionmentioning

confidence: 99%

Database Development of SiO2 Etching with Fluorocarbon Plasmas Diluted with Various Noble Gases of Ar, Kr, and Xe

et al. 2022

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In the semiconductor industry, fluorocarbon (FC) plasma is widely used in SiO2 etching, with Ar typically employed in the dilution of the FC plasma due to its cost effectiveness and accessibility. While it has been reported that plasmas with other noble gases, namely Kr and Xe, have distinct physical properties such as electron density and temperature, their implementation into plasma etching has not been sufficiently studied. In this work, we conducted SiO2 etching with FC plasmas diluted with different noble gases, i.e., FC precursors of C4F8 and CH2F2 with Ar, Kr, or Xe, under various gas flow rates of each as well as plasma diagnostics for the process interpretation. We show that Ar, Kr, and Xe gas mixtures depend on the FC precursor flow rate and the pattern width in a significantly different manner and we elucidate these findings based on plasma diagnostic results. The results of this work are expected to offer a practical etching database for diverse applications including plasma process engineering and the development of plasma simulation in the semiconductor industry.

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“…In addition to this experimental approach, Kushner et al studied the kinetics and chemistry of plasma numerically through modeling [7]. Recently, Im et al established a semi-global surface reaction model and suggested the SiO 2 etching mechanism of fluorocarbon plasma [8].…”

Section: Introductionmentioning

confidence: 99%

Characterization of SiO₂ Over Poly-Si Mask Etching in Ar/C₄F₈ Capacitively Coupled Plasma

Seong

Lee

Cho

et al. 2021

Appl. Sci. Converg. Technol.

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This research involved an experimental investigation of the relationship between the plasma parameters and etching properties of SiO 2 over poly-Si mask in Ar/C 4 F 8 capacitively coupled plasma (CCP). In these experiments, the etching process was conducted in CCP and the external conditions such as the applied power, pressure, and gas ratio were varied. In addition, the density of radicals, which dominantly participate in surface reactions, the electron density, and the self-bias voltage were measured. As a result, deposition of the CF x polymer film on the poly-Si mask lowered the electron density and self-bias voltage and the etch rate of the target and the mask increased as the internal parameters of the plasma increased. This result indicated that the electron density and the self-bias voltage, which represent the physical etch elements of ion flux and energy, respectively, have a marked influence on the etching process. Consequently, our work led us to propose a critical value, which is the product of the electron density and self-bias voltage, n e V bias , to analyze the etching mechanism. Our results are also expected to serve as a basic processing database that enables an in-depth understanding of etching.

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A unified semi-global surface reaction model of polymer deposition and SiO2 etching in fluorocarbon plasma

Cited by 12 publications

References 24 publications

Fast and realistic 3D feature profile simulation platform for plasma etching process

Fast and realistic 3D feature profile simulation platform for plasma etching process

Database Development of SiO2 Etching with Fluorocarbon Plasmas Diluted with Various Noble Gases of Ar, Kr, and Xe

Characterization of SiO₂ Over Poly-Si Mask Etching in Ar/C₄F₈ Capacitively Coupled Plasma

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A unified semi-global surface reaction model of polymer deposition and SiO2 etching in fluorocarbon plasma

Cited by 12 publications

References 24 publications

Fast and realistic 3D feature profile simulation platform for plasma etching process

Fast and realistic 3D feature profile simulation platform for plasma etching process

Database Development of SiO2 Etching with Fluorocarbon Plasmas Diluted with Various Noble Gases of Ar, Kr, and Xe

Characterization of SiO2 Over Poly-Si Mask Etching in Ar/C4F8 Capacitively Coupled Plasma

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Characterization of SiO₂ Over Poly-Si Mask Etching in Ar/C₄F₈ Capacitively Coupled Plasma