A unified mobility model for device simulation—I. Model equations and concentration dependence

“Zero-charge” SiO2/Al2O3 stacks for the simultaneous passivation of n+ and p+ doped silicon surfaces by atomic layer deposition

“…As input for the simulations, the fundamental surface recombination velocities for electrons and holes were S n0 ¼ 6500 cm/s and S p0 ¼ 65 cm/s, respectively. In the simulations, Fermi-Dirac statistics were used, in combination with the band-gap narrowing model of Schenk [43], the Auger model of Dziewior and Schmid [55], and the Klaassen mobility model [56]. The bulk SRH lifetimes were τ p0 ¼τ n0 ¼ 1 ms.…”

Three-dimensional numerical analysis of hybrid heterojunction silicon wafer solar cells with heterojunction rear point contacts

“…In particular, the fitting of the measured injection dependent effective carrier lifetime curves of non-diffused/P-diffused/B-diffused n-type CZ wafers passivated either by dielectric films (SiN x , AlO x /SiN x ) or by heterojunction films (intrinsic a-Si:H, stack of intrinsic/doped a-Si:H, doped µc-Si:H) provides information on both bulk film properties and its interface properties towards the c-Si substrate, see Figure 4. A consistent set of models and parameters for the simulation of wafer based silicon solar cells were applied, 17 including Fermi-Dirac statistics, Klaassen's unified mobility model, 18,19 and the adapted parameters for radiative recombination 20 and Auger recombination. 21 …”

Modeling Hole Surface- and Bulk-Mobility in the Frame of a Spherical-Harmonics Solution of the BTE

“…The effects of the Born approximation of order higher than one for incoherent collisions with a single impurity and for coherent collisions with impurity-pairs are accounted for. Impurity clustering, relevant for high doping concentrations, is implemented, following the work of [8]. At high doping densities the carrier scatters with a cluster of Z ions, where the clustering function Z depends on the impurity concentration.…”