A Unified Capacitive-Coupled Memristive Model for the Nonpinched Current–Voltage Hysteresis Loop

Sun, Bai; Chen, Yuanzheng; Xiao, Ming; Zhou, Guangdong; Ranjan, Shubham; Hou, Wentao; Zhu, Xiaoli; Zhao, Yong; Redfern, Simon A. T.; Zhou, Yunhong

doi:10.1021/acs.nanolett.9b02683

Cited by 146 publications

(87 citation statements)

References 43 publications

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“…[ 16 ] Recently, a capacitive‐coupled memristive effect has been suggested to illustrate the nonpinched current–voltage ( I – V ) hysteresis loop based on a model of parallel connecting an ideal memristor and capacitor. [ 17 ] It also implies the feasible coexistence of the functions of the memristor and solid supercapacitor in principle.…”

Section: Introductionmentioning

confidence: 99%

Bifunctional Device with High‐Energy Storage Density and Ultralow Current Analog Resistive Switching

Liu

Xue

Wang

et al. 2021

Adv Elect Materials

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A bifunctional device capable of simultaneously achieving dielectric energy storage and resistive switching is first designed and fabricated based on a conventional metal–insulator–metal (MIM) structure. Typically, Al/TaOx/Pt structure shows a high breakdown strength up to 5.07 MV cm−1 and a relatively high‐energy density of 27.6 J cm−3. Meanwhile, the leakage current of the MIM structure is at the sub‐nanoampere level and exhibits the typical characteristic of analog switching under an applied voltage of about 12 volts. The energy density and the switching current in the developed integrated MIM structure are comparable to the corresponding performances in discrete binary oxides capacitors with linear dielectric and oxide‐based memristors, respectively. Furthermore, synaptic functions with short‐term and long‐term plasticities can be realized. Both of the device properties are found to be correlated to the role of the AlOx interfacial layer between the Al electrode and the dielectric layer, which provides the possibility of coupling between these two functions coexisting in the MIM structure. The prototypical bifunctional device offers a great prospect for multifunctional energy and neuromorphic applications.

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Section: Introductionmentioning

confidence: 99%

Bifunctional Device with High‐Energy Storage Density and Ultralow Current Analog Resistive Switching

Liu

Xue

Wang

et al. 2021

Adv Elect Materials

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“…When the bias exceeds 3 V, the device exhibits a symmetric resistive switching performance at high bias while the contribution of the capacitive response remained at low bias (Figure b,e and Figures S1c and S2c, Supporting Information). This implies that the single TiO 2 nanobelt device changes from a capacitive behavior to a capacitive‐coupled memristor behavior when the sweeping bias exceeds 3 V. The capacitive‐coupled memristive effect has been previously reported in the case of nonvolatile memory devices, but, to the best of our knowledge, this is the first time that this characteristic has been reported in volatile threshold switching devices . Further increasing the sweeping bias up to 10 V (Figure c,f) and 20 V (Figures S2i and S3i, Supporting Information) will lead to an increased current for the resistive switching behavior, but the devices still have a small capacitive contribution at low bias.…”

Section: Resultsmentioning

confidence: 55%

“…This implies that the single TiO 2 nanobelt device changes from a capacitive behavior to a capacitive-coupled memristor behavior when the sweeping bias exceeds 3 V. The capacitive-coupled memristive effect has been previously reported in the case of nonvolatile memory devices, [47] but, to the best of our knowledge, this is the first time that this characteristic has been reported in volatile threshold switching devices. [48] Further increasing the sweeping bias up to 10 V (Figure 3c,f) and 20 V (Figures S2i and S3i, Supporting Information) will lead to an increased current for the resistive switching behavior, but the devices still have a small capacitive contribution at low bias. This is why the I-V curve of the TiO 2 nanobelt device is not pinched to zero, in great contrast to the zero-crossing behavior typically observed in memristive devices.…”

Section: I-v Sweeping Performance and Transport Mechanism Studymentioning

confidence: 99%

Threshold Switching in Single Metal‐Oxide Nanobelt Devices Emulating an Artificial Nociceptor

Xiao

Shen

Futscher

et al. 2019

Adv Elect Materials

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conventional digital computers designed according to the von Neumann configuration, in which the arithmetic/logic units and memory units are separated, the brain outperforms digital computers due to its dramatically different configuration, in which arithmetic calculation and memory operate simultaneously without the burden of data transmission. Hardware implementation of neuromorphic systems has attracted much interest due to the great potential inherent in machine learning at low power consumption. Conventional systems based on complementary metal-oxide semiconductor devices have been used for the emulation of synaptic behaviors, [3,4] but these transistor devices bear little phenomenological similarity to the biological synapse [5] and the realization of neuromorphic computing systems by traditional transistor devices requires the construction of large-scale parallel logic and switching cells. This is accompanied by high power consumption, complex structural configurations, and intrinsic difficulty in scaling down to meet the needs of future nanoelectronic devices. Solid state devices that can accurately emulate the functions and plasticity of biological synapses will be the most important basic building blocks in brain-inspired computation systems. [6] Electronic devices that can simulate the dynamics of neurotransmission in the human body are of great interest for the development of artificial intelligence in modern information technology. An artificial nociceptor realized by a single metal-oxide nanobelt device with a unique capacitive-coupled threshold switching behavior is demonstrated. Via thermal admittance spectroscopy and temperature-dependent sweeping study, the properties of the nanobelt devices are determined by Schottky emission at low bias and by defect-assisted quantum tunneling at high bias subject to a threshold voltage. The low activation energy associated with dynamic electron trapping gives rise to a voltage-dependent volatile threshold switching behavior. This threshold switching behavior allows the emulation of several characteristic features of a nociceptor, a critical type of sensory neuron in the human body, including "threshold," "relaxation," "no adaptation," "allodynia," and "hyperalgesia" behaviors, essential for the realization of electronic sensory receptors that detect noxious stimuli and signal rapid warning to the central nervous system. One-dimensional metal oxide nanobelt devices of this type yield multifunctional nociceptor performance that is fundamental for applications in artificial intelligence systems, representing a key step in the realization of neural integrated devices via a bottom-up approach.

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“…Because of the unique advantages and potential applicability of biomemristors, biomemristors have a wide range of applications in electronic skin, biomedical and brain chip applications. [ 3,4 ] In general, biomemristor cells must be biocompatible and for electronic applications. [ 5–7 ] However, most memristor cells are made of inorganic materials, which are brittle and incompatible without flexible and versatile functionalities.…”

Section: Introductionmentioning

confidence: 99%

A Flexible Transient Biomemristor Based on Hybrid Structure HfO₂/BSA:Au Double Layers

Zhang

Guo

et al. 2020

Adv Materials Technologies

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applied and realized in new emerging memristors (i.e., resistive switching (RS)) devices, such as spider silk, silk fibroin, and egg albumen, and have been adopted as a functional layer to prepare the memristor cell. [1,2] Biomemristors have the advantages of low costs and being environmentally friendly, and they can be used to mimic the biosynapse function or nonvolatile memory to meet the need for sustainable development of electronic devices. Because of the unique advantages and potential applicability of biomemristors, biomemristors have a wide range of applications in electronic skin, biomedical and brain chip applications. [3,4] In general, biomemristor cells must be biocompatible and for electronic applications. [5-7] However, most memristor cells are made of inorganic materials, which are brittle and incompatible without flexible and versatile functionalities. [8-10] Among these biomaterials, bovine serum doped with nanogold (BSA:Au) is a natural organic material that is environmentally friendly. However, the performance of biomemristors based on this material is not stable; switching voltage and high-and low-resistance values are still relatively scattered to some extent. Therefore, it is necessary to develop flexible biomemristors that can degrade and have stable performance and reliable repeatability. On the other hand, flexible electronic device cells have been widely explored in recent years [11] in wearable devices, foldable displays, and nonvolatile resistive random-access memory devices. Furthermore, if the functional layer possesses good water-solubility, traditional electronic devices may not pollute the environment, which is undoubtedly great progress. In this work, we prepared a biomemristor using BSA:Au as the intermediate layer. We designed a new hybrid structure and added a layer of HfO 2 between the intermediate layer and electrode to stabilize the device's relevant properties. By analyzing the switching threshold distribution of devices with and without an HfO 2 intermediate layer, we discovered that the threshold voltage and the switching speed of devices with an intermediate oxide layer become smaller and faster. It is proposed that the filament rupture/rejuvenation depends on the two-layer interface region due to different Ag + traveling speeds in these two layers. We also constructed the same structure on a polydimethylsiloxane (PDMS) flexible substrate to give the device good foldability and make it wearable. These devices also possess excellent performance in bending and folding conditions.

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A Unified Capacitive-Coupled Memristive Model for the Nonpinched Current–Voltage Hysteresis Loop

Cited by 146 publications

References 43 publications

Bifunctional Device with High‐Energy Storage Density and Ultralow Current Analog Resistive Switching

Bifunctional Device with High‐Energy Storage Density and Ultralow Current Analog Resistive Switching

Threshold Switching in Single Metal‐Oxide Nanobelt Devices Emulating an Artificial Nociceptor

A Flexible Transient Biomemristor Based on Hybrid Structure HfO₂/BSA:Au Double Layers

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A Unified Capacitive-Coupled Memristive Model for the Nonpinched Current–Voltage Hysteresis Loop

Cited by 146 publications

References 43 publications

Bifunctional Device with High‐Energy Storage Density and Ultralow Current Analog Resistive Switching

Bifunctional Device with High‐Energy Storage Density and Ultralow Current Analog Resistive Switching

Threshold Switching in Single Metal‐Oxide Nanobelt Devices Emulating an Artificial Nociceptor

A Flexible Transient Biomemristor Based on Hybrid Structure HfO2/BSA:Au Double Layers

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Resources

About

A Flexible Transient Biomemristor Based on Hybrid Structure HfO₂/BSA:Au Double Layers