A uniaxial tensile stress apparatus for temperature-dependent magnetotransport and optical studies of thin films

Abstract

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Giant Room-Temperature Piezoresistance in a Metal-Silicon Hybrid Structure

“…Standard four-terminal resistance measurements were made using the four 3 m wide external leads: current is supplied to the outer leads and a voltage is measured across the inner leads. Individual 30 mm 16 mm chips cut from the silicon wafer, each containing four geometrically different aluminum-silicon structures at its center on the chip surface, were mounted in a specifically designed apparatus for the application of uniaxial tensile strain along the [110] crystal axis using a bending technique similar to that described elsewhere [16]. Strain was measured using commercial metal foil strain gages glued to the rear face of the chip.…”

Enhanced room-temperature piezoconductance of metal–semiconductor hybrid structures

“…At small values of ␣ ͑i.e., mostly semiconductor͒, the piezoconductance approaches 1.5%, the measured piezoconductance of the semiconductor alone. 12 At large ␣ ͑i.e., mostly metal͒, it approaches a value lower than 1.5% corresponding to the small but finite metal piezoconductance. The large peak of Ϸ8% at intermediate values of ␣ is reminiscent of the peak in the EMR plotted versus ␣ for circular geometry MSHs.…”

“…The strain is measured with a resolution of 1.5ϫ10 Ϫ5 using a simple optical reflection technique, details of which, along with a complete description of the strain mechanism can be found elsewhere. 12 The results of these measurements are shown in Fig. 1 in which the piezoconductance is defined as ͉͓R(⑀,␣) ϪR(0,␣)͔͉/R(0,␣) where ⑀ is the strain and R is the four terminal MSH apparent resistance.…”

“…The magnitude of the piezoconductance is: strongly dependent on the unstrained sample geometry; largest for ␣ϭ9/16; and greatly exceeds the piezoconductance of the homogeneous semiconductor alone. 12 The data is replotted as a function of ␣ for 15 different samples in Fig. 2͑a͒ at a fixed value of strain, ⑀ϭ3 ϫ10 Ϫ4 .…”

“…Each sample was wire bonded into a holder especially designed to be compatible with our uniaxial tensile strain apparatus. 12 The room temperature four terminal resistance measurements were carried out at a fixed current of 1 mA using the lead configuration shown in the inset of Fig. 1, and the strain was gradually increased in the ͑001͒ crystal direction, parallel to the metalsemiconductor interface, until the substrates broke.…”