1988
DOI: 10.1002/qre.4680040406
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A two‐step methodology for CMOS VLSI reliability improvement: Step one

Abstract: Reliability improvement of CMOS VLSI circuits depends on a thorough understanding of the technology, failure mechanisms, and resulting failure modes involved. Failure analysis has identified open circuits, short circuits and MOSFET degradations as the prominent failure modes. Classical methods of fault simulation and test generation are based on the gate level stuck‐at fault model. This model has proved inadequate to model all realistic CMOS failure modes. An approach, which will complement available VLSI desi… Show more

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