A two-step growth route of ternary aluminium doped zirconium oxide film on silicon

Comparative study of oxidizing ambient infused with varying nitrogen flow rates for fabrication of ternary nitrided AlZrO based MOS capacitor

“…It was revealed that all of the investigated Al x Zr y O z films have displayed the detection of peak with regards to tetragonal phase of Al x Zr y O z at a wavenumber ranging from 143.6 to 149.2 cm −1 . The largest wavenumber of 149.2 cm −1 , referring to tetragonal phase of Al x Zr y O z , has been attained by Al x Zr y O z film grown in the absence of nitrogen gas 13 and the shifting of this detected tetragonal phase to smaller wavenumber was perceived when oxidation process was performed in the presence of nitrogen gas. This observation was in corroboration with the above elucidation pertaining to occupying of nitrogen ions at interstitial sites that have resulted in the expansion of lattice parameter a .…”

“…Nitrogen gas was allowed to flow in the heating and cooling zones during the post‐sputter oxidation process. A comparative sample was included in this study, whereby oxygen gas was allowed to flow since the beginning of the process, which was referred to as the heating, dwelling, and cooling zone in the absence of nitrogen 13 . After the post‐sputter oxidation process, Al top contact was deposited onto the Al x Zr y O z films via shadow mask using thermal evaporator (AUTO 306) to fabricate MOS test structure, and the Si backside was deposited with a layer of Al.…”

“…In recent times, keeping in pace with the advantages provided by ternary AlZrO x , the exploration of the films was further extended to application in Si‐based MOS devices. Successful formation of ternary Al x Zr y O z via a two‐step growth route was reported, whereby as‐sputtered Al‐Zr alloy film was subjected to a dry oxidation process in oxygen ambient at different temperatures (400°C, 600°C, 800°C, and 1000°C) 13 . The formation of aluminum zirconium silicate (Al‐Zr‐Si‐O) interfacial layer was reported, yielding to an increase in the total oxide thickness, and the resulting k value was reduced from 23.2 to 17.7 13 .…”

“…Successful formation of ternary Al x Zr y O z via a two‐step growth route was reported, whereby as‐sputtered Al‐Zr alloy film was subjected to a dry oxidation process in oxygen ambient at different temperatures (400°C, 600°C, 800°C, and 1000°C) 13 . The formation of aluminum zirconium silicate (Al‐Zr‐Si‐O) interfacial layer was reported, yielding to an increase in the total oxide thickness, and the resulting k value was reduced from 23.2 to 17.7 13 . Although interfacial layer formation could have improved the interface quality, the presence of lower k interfacial layer would deplete the purpose of proposing a high k metal oxide to replace SiO 2 .…”

Preparation and characterisation of aluminium zirconium oxide for metal‐oxide‐semiconductor capacitor

“…35 The formation of ternary ZrAlO x film was reported in recent time using atomic layer deposition technique that deposited ZrO 2 and Al 2 O 3 films on highly-doped Si substrate at 250 C. 36 Besides, the transformation of Al-Zr alloy layers that were co-sputtered in oxygen ambient from 400 C to 1000 C to ternary Al x Zr y O z films was also reported. 37 Various optimization parameters, such as sputtering power ratios of Al to Zr (0.500, 0.625, and 0.750) as well as post oxidation annealing temperatures and ambient (wet, dry, and atmospheric) were executed with the objective of improving the MOS characteristics of Al x Zr y O z passivation layer grown on Si substrate. [38][39][40] However, an issue aligned with film buckling effect was encountered during the transformation of Al-Zr alloy layers grown using sputtering power ratios of 0.5 and 0.75 in dry oxidation condition to Al x Zr y O z passivation layers at/beyond 800 C and 1000 C, respectively.…”