A two-step etching method to fabricate nanopores in silicon

Abstract

A cost effectively method to fabricate nanopores in silicon by only using the conventional wet-etching technique is developed in this research. The main concept of the proposed method is a two-step etching process, including a premier double-sided wet etching and a succeeding track-etching. A special fixture is designed to hold the pre-etched silicon wafer inside it such that the track-etching can be effectively carried out. An electrochemical system is employed to detect and record the ion diffusion current once the pre-etched cavities are etched into a through nanopore. Experimental results indicate that the proposed method can cost effectively fabricate nanopores in silicon.

Fabrication and electrical characterization of a pore–cavity–pore device

“…We measured an etch rate of 25 nm min −1 , a value which is about half of what is reported in literature [12]. This discrepancy can be explained by the applied potential, which reduces the OH − concentration at the KOH/Si interface [13].…”

Electrophoretic deposition of uniformly distributed TiO2nanoparticles using an anodic aluminum oxide template for efficient photolysis

“…In this study, an electrochemical cell made of acrylic, with dimensions of 2 cm × 1.2 cm × 1.2 cm, was constructed for the photovoltaic body. A silicon based nano-channel membrane, fabricated by the two-step etching method, was used as the artificial thylakoid membrane [30]. The photocatalyst was placed in one of the two vessels as the artificial chlorophyll.…”

Nanopore Size Estimation by Electrochemical Impedance Spectroscopy Analysis

“…Park et al 24) fabricated nanopores on silicon using electrochemical track etching and thermal oxidation. Wang et al 25) manufactured silicon based nanopores using a specially designed fixture to enable better control of the track-etching process. A 19 nm nano pore can be produced without additional thermal oxidation.…”