A two-phase GaAs cermet gate charge-coupled device

LeNoble, M.; Cresswell, J. V.; Johnson, R.

doi:10.1109/16.57128

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Two-phase Uniform-doped Algaas/gaas 2 Deg-ccd1

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1991

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Cited by 9 publications

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“…The major difference between the two-phase and four-phase device structures is that a recessed gate is defined and deposited prior to cermet deposition. Recessing reduces the depth of the potential well under the recess [ 181, [28], [29]. In the two-phase device, the finger electrodes are spaced and connected as shown in Fig.…”

Section: Two-phase Uniform-doped Algaas/gaas 2 Deg-ccdmentioning

confidence: 99%

<title>Two-dimensional electron gas charge-coupled devices</title>

1991

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Abstract-The two-dimensional electron gas charge-coupled device (ZDEG-CCD) structure for 111-V and other heterojunction materials is reviewed. Device design considerations for gate, insulator, and channel material parameters are presented. Optimization of ZDEG-CCD performance parameters such as well capacity, dark current, and transfer efficiency is discussed. Experimental results on AIGaAs/GaAs uniformdoped and planar-doped devices are reviewed.

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Section: Two-phase Uniform-doped Algaas/gaas 2 Deg-ccdmentioning

confidence: 99%