Abstract-The two-dimensional electron gas charge-coupled device (ZDEG-CCD) structure for 111-V and other heterojunction materials is reviewed. Device design considerations for gate, insulator, and channel material parameters are presented. Optimization of ZDEG-CCD performance parameters such as well capacity, dark current, and transfer efficiency is discussed. Experimental results on AIGaAs/GaAs uniformdoped and planar-doped devices are reviewed.