A two-dimensional self-consistent numerical model for high electron mobility transistor

Ng, Sze-Him; Khoie, Rahim; Venkat, Rama

doi:10.1109/16.75215

Cited by 25 publications

(12 citation statements)

References 25 publications

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“…Mathematically this can be explained clearly by Eqs. (9), (11) and (16). To mention briefly if the oxide interface charge is negative (for SiO 2 & Al 2 O 3 ), E well increases with oxide thickness as per Eq.…”

Section: Resultsmentioning

confidence: 94%

“…To mention briefly if the oxide interface charge is negative (for SiO 2 & Al 2 O 3 ), E well increases with oxide thickness as per Eq. (9). So the Eigen energy levels also increase nonlinearly [(with power 2/3 as per Eq.…”

Section: Resultsmentioning

confidence: 95%

“…In Ref. [9] a two dimensional self-consistent numerical model is presented which considers the spatial distribution of electrons inside the well instead of only considering at the junction. The above models were formulated for AlGaAs/GaAs system.…”

Section: Introductionmentioning

confidence: 99%

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Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT

et al. 2015

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Oxide dielectric present in metal oxide semiconductor high electron mobility transistor plays an important role during formation of two dimensional electron gas (2DEG). The sheet charge concentration (n s ) is dependent on the Eigenenergy states present in triangular quantum well at AlGaN/GaN interface. The energy states are in fact functions of vertical electric field at the edge of the well. Therefore in this paper a model is developed to find out Electric field and flat-band voltage (V T ) by adopting energy band approach to incorporate oxide parameters in it unlike the conventional method of solving Poisson's equation, which is the uniqueness of this paper. The Eigenenergy states are dependent non-linearly on electric field. In the present case, three quantum states in the well are considered along with the Fermi-Dirac distribution function to obtain n s . The dependence of 2DEG density, electric field and flat-band voltage on the oxide parameters such as thickness and electrical permittivity is analyzed. With respect to thickness in SiO 2 and Al 2 O 3 , n s shows inverse relationship; whereas in HfO 2 it is direct due to positive charges accumulated at oxide/barrier interface. To the best of author's knowledge the work is first of its kind and due to lack of experimental data; the obtained results are compared with TCAD results to validate the model.

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Section: Resultsmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 95%

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Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT

et al. 2015

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“…955 nonlinear dependence, but have used many fitting parameters that are of little physical importance [10], [11] or use iterative techniques that are unsuitable for circuit simulation [12], [13]. Therefore, to provide a better physical understanding of the device operation, an analytical approach to model the 2-DEG density of AlGaN / GaN HEMTs is highly desirable.…”

Section: Analytic Estimation Of Two-dimensional Electron Gas Density mentioning

confidence: 99%

Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT’s

Babaya¹,

Bri²,

Saadi³

2018

IJECE

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This paper is mainly dedicated to understand the phenomena governing the formation of two-dimensional electron gas (2DEG) confined in the quantum well which hold the role of the channel in the high electron density transistors (HEMT) based on AlGaN / GaN heterojunction. The theory takes into account: the crystal structure, the spontaneous and piezoelectric polarization concept, the formation mechanism of two-dimensional electron gas at the AlGaN / GaN interface, the approximate resolution of the Poisson and Schrödinger equations to determine the density of Two-dimensional electron gas after the analytical formula of the current-voltage characteristic is established. Our study is also concerned with the dependence of the twodimensional electron gas density on the following technological parameters: Aluminum molare fraction, AlGaN layer thickness and AlGaN layer doping, In order to control the influence of these parameters on the device performance. Finally, the current-voltage characteristic which reflects the variation of the drain-source current as a function of the modulation of the gate voltage has been discussed. Keyword: 2DEG INTRODUCTIONThe area of microelectronics has been marked by an increase in the demand for components which can operate in frequency increasingly higher [1][2][3]. Emerging needs in this area are not only related to the telecommunications market, but in other areas of application such as embedded electronics at bound for the automotive and aeronautic. The largest concerns in semiconductor integrated circuits are high-speed operation and low power consumption [4]. Since the 90s, a new generation of semiconductor components (HEMT) is under study and evaluation thanks to the advent of wide band gap materials such as GaN [5], GaN based devices are very useful for high frequency high temperature microwave applications such as radar systems [6]. Transistors AlGaN / GaN HEMTs results are very promising for power electronics and high frequency due to their two-dimensional electron gas 2DEG high density and high mobility as well as to their high breakdown field [7].To develop a reliable model of HEMT, an accurate estimate of the two-dimensional electron gas density at AlGaN / GaN interface is of considerable importance. A number of charge control models for HEMTs have been developed to characterize the 2-DEG concentration. These models are useful as they provide an insight into the physical operation of the device, but they generally require simplifying assumptions for the 2DEG density. Some models assume a linear dependency of 2DEG density at the gate bias, but the values of 2DEG density are underestimated near the threshold [8], [9]. Other models offer a

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“…Solving coupled Schrodinger -Poisson equations are a general numerical method to achieve wave functions [5][6][7][8][9][10]. By variational technique, we can obtain wave function analytically, without solving Schrödinger equation.…”

Section: Introductionmentioning

confidence: 99%

Intersubband scattering effects on the carrier velocity of a AlGaAs/GaAs single-well heterostructure

Ghaffari¹,

Saghafi²

2008

2008 2nd IEEE International Nanoelectronics Conference

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In this paper, we present an accurate model for scattering rates in a AlGaAs/GaAs single-well heterostructure, based on new extended relations for wave functions and subband levels. In this structure, the wave functions and energy levels of two dimensional electron gas are derived by a variational method. The effect of fourth subband level on the scattering rates and carrier velocity are evaluated by Monte Carlo simulation.

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A two-dimensional self-consistent numerical model for high electron mobility transistor

Cited by 25 publications

References 25 publications

Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT

Modeling and simulation of oxide dependent 2DEG sheet charge density in AlGaN/GaN MOSHEMT

Analytic Estimation of Two-Dimensional Electron Gas Density and Current-Voltage Characteristic in AlGaN/GaN HEMT’s

Intersubband scattering effects on the carrier velocity of a AlGaAs/GaAs single-well heterostructure

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