A Tunneling Current Model with a Realistic Barrier for Ultra-Thin High-k Dielectric ZrO2 Material Based MOS Devices

Maity, N. P.; Maity, Reshmi; Baishya, Srimanta

doi:10.1007/s12633-017-9648-4

Cited by 18 publications

(3 citation statements)

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“…For these emerging devices, materials that possess a higher k of 40–100 and wide band gaps between 4 and 8 eV are desired. , Unfortunately a trade-off is being observed in most dielectric oxides, where increases in the band gap are often found to lead to a decreased dielectric constant . Furthermore, novel high -k nanomaterials should also ideally be stable under conditions encountered during CMOS manufacturing to enable integration with conventional semiconductors such as Si or GaAs. ,, …”

Section: Introductionmentioning

confidence: 99%

“…7 Furthermore, novel high-k nanomaterials should also ideally be stable under conditions encountered during CMOS manufacturing to enable integration with conventional semiconductors such as Si or GaAs. 3,19,20 Two recent works elucidated the dielectric properties of antimony oxide that was prepared using the chemical vapor deposition (CVD) synthesis method at relatively high temperatures of 550 and 750 °C. 16,21 Surprisingly, one report suggested that the α-Sb 2 O 3 is a low-k dielectric material, whereas the other presented as a high dielectric wide band gap oxide.…”

Section: Introductionmentioning

confidence: 99%

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High-k 2D Sb₂O₃ Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process

et al. 2021

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High dielectric constant (high-k) ultrathin films are required as insulating gate materials. The well-known high-k dielectrics, including HfO2, ZrO2, and SrTiO3, feature three-dimensional lattice structures and are thus not easily obtained in the form of distinct ultrathin sheets. Therefore, their deposition as ultrathin layers still imposes challenges for electronic industries. Consequently, new high-k nanomaterials with k in the range of 40 to 100 and a band gap exceeding 4 eV are highly sought after. Antimony oxide nanosheets appear as a potential candidate that could fulfill these characteristics. Here, we report on the stoichiometric cubic polymorph of 2D antimony oxide (Sb2O3) as an ideal high-k dielectric sheet that can be synthesized via a low-temperature, substrate-independent, and silicon-industry-compatible liquid metal synthesis technique. A bismuth–antimony alloy was produced during the growth process. Preferential oxidation caused the surface of the melt to be dominated by α-Sb2O3. This ultrathin α-Sb2O3 was then deposited onto desired surfaces via a liquid metal print transfer. A tunable sheet thickness between ∼1.5 and ∼3 nm was achieved, while the lateral dimensions were within the millimeter range. The obtained α-Sb2O3 exhibited high crystallinity and a wide band gap of ∼4.4 eV. The relative permittivity assessment revealed a maximum k of 84, while a breakdown electric field of ∼10 MV/cm was observed. The isolated 2D α-Sb2O3 nanosheets were utilized in top-gated field-effect transistors that featured low leakage currents, highlighting that the obtained material is a promising gate oxide for conventional and van der Waals heterostructure-based electronics.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-k 2D Sb₂O₃ Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process

et al. 2021

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“…Hafnium oxide is employed as a promising gate oxide material because of its excellent interface with Si, high-k value (22), big bandgap (5.6 eV), and conduction band offset (1.4 eV) with regard to Si. Most significantly, a decent electrical interaction with Si makes it a prospective alternative to silicon dioxide [17][18][19][20][21].…”

Section: Structural Dimensions Ie W mentioning

confidence: 99%

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

et al. 2023

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An inversion charge-based threshold voltage model is proposed for 10 nm channel length Tri-gate (TG) FinFET. The variation threshold voltage has been studied with respect to fin width W f i n for different fin height H f i n and channel length L . The effect of width quantization has been explained with the help of the quantum mechanical effect (QME). A precise comparison of threshold voltage in terms of classical mechanics and quantum mechanics depicts the presence of width quantization in short channel device. The improvement of the short channel effects (SCEs), like subthreshold swing (SS), drain-induced barrier lowering (DIBL) and threshold voltage roll off have been studied. The impact of channel length to fin width ratio on DIBL and S S has been examined. The improvement of the SCEs at the same oxide thickness has been observed for high-k dielectric material. The potential and effect of hafnium oxide (HfO2) have been discussed and validated using technology computer-aided design (TCAD) simulation.

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Electrical Performance of Single Gate and Double Gate MOSFET to Optimize the Gate Length

Lalthlamuana

Maity

Singh

et al. 2021

Lecture Notes in Electrical Engineering

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A Tunneling Current Model with a Realistic Barrier for Ultra-Thin High-k Dielectric ZrO2 Material Based MOS Devices

Cited by 18 publications

References 29 publications

High-k 2D Sb₂O₃ Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process

High-k 2D Sb₂O₃ Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

Electrical Performance of Single Gate and Double Gate MOSFET to Optimize the Gate Length

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A Tunneling Current Model with a Realistic Barrier for Ultra-Thin High-k Dielectric ZrO2 Material Based MOS Devices

Cited by 18 publications

References 29 publications

High-k 2D Sb2O3 Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process

High-k 2D Sb2O3 Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process

Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect

Electrical Performance of Single Gate and Double Gate MOSFET to Optimize the Gate Length

Contact Info

Product

Resources

About

High-k 2D Sb₂O₃ Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process

High-k 2D Sb₂O₃ Made Using a Substrate-Independent and Low-Temperature Liquid-Metal-Based Process