2017 IEEE/ACM International Symposium on Low Power Electronics and Design (ISLPED) 2017
DOI: 10.1109/islped.2017.8009161
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A tunable Ultra Low Power inductorless Low Noise Amplifier exploiting body biasing of 28 nm FDSOI technology

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Cited by 12 publications
(8 citation statements)
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“…Table 1 shows a performance comparison in terms of the NF for the RTD amplifier with other microwave low‐power amplifiers dissipating dc‐power below a milli‐watt for C‐band [2, 3, 6, 8, 1419]. The f C , BW 3dB , and S 21_max denote the centre frequency, 3 dB bandwidth, and maximum S 21 , respectively.…”
Section: Nf Analysismentioning
confidence: 99%
“…Table 1 shows a performance comparison in terms of the NF for the RTD amplifier with other microwave low‐power amplifiers dissipating dc‐power below a milli‐watt for C‐band [2, 3, 6, 8, 1419]. The f C , BW 3dB , and S 21_max denote the centre frequency, 3 dB bandwidth, and maximum S 21 , respectively.…”
Section: Nf Analysismentioning
confidence: 99%
“…Another LNA designed for ultra low power applications targeting the 2.4 GHz band has been proposed by [13], [26]. The circuit design consists of a common gate topology exploiting transistor body biasing while the LNA parameters are reconfigurable via changing the supply voltage.…”
Section: A Related Workmentioning
confidence: 99%
“…Following the antenna-filter block, the LNA dictates the RF chain sensitivity. The employed LNA in [13] was designed for ultra low power applications and implemented in Fully-Depleted Silicon-On-Insulator (FDSOI) 28 nm ST-Microelectronics technology targeting the 2.4 GHz band. A simplified schematic of the LNA is reported in Fig.…”
Section: B Reconfigurable Lnamentioning
confidence: 99%
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