A TSV-Structured Room Temperature p-Type TiO2 Nitric Oxide Gas Sensor

Yeh, Yu-Ming; Chang, Shoou‐Jinn; Wang, Pin-Hsiang; Hsueh, Ting-Jen

doi:10.3390/app12199946

Cited by 6 publications

(3 citation statements)

References 41 publications

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“…The sensor response increases as the NO 2 concentration increases. In the previous research, Yeh presented a cylindrical TSV-structured TiO 2 gas sensor sensing NO airflow, and the responses were 6.4, 8.2, 10.9, 16.7, and 21.3% for NO concentrations of 0.5, 1, 2, 4, and 8 ppm . It can be proven that the fabricated conical sensor has higher responses due to a greater surface-to-volume ratio.…”

Section: Resultsmentioning

confidence: 94%

Room-Temperature TiO₂ Gas Sensor with Conical-TSV Using a Thermal Oxidation Process

Hou,

Lin,

Hsueh

2023

ACS Appl. Electron. Mater.

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Through-silicon via (TSV) technology is used to produce a TiO 2 gas sensor. The conical TSV structure is constructed using a laser with a wavelength of 1064 nm, and the depth-to-diameter ratio is 20:13 (200 μm: 130 μm). The sensing layer TiO 2 is fabricated by using a thermal oxidation (TO) process and covers the TSV structure. X-ray diffraction and energy-dispersive X-ray spectroscopy analysis show that the main plane of the TiO 2 film is (110), and there is a uniformly covered TSV structure. For the TiO 2 gas sensor operating at room temperature (RT) of 25 °C, the recorded sensor responses are 12.08, 15, 18.5, 23.9, 31, and 38.9%, corresponding to NO 2 concentrations of 0.25, 0.5, 1, 2, 5, and 10 ppm. In assessing the stability, the sensing result registers 18.5% over three cycles at 1 ppm of NO 2 , with a deviation under ±0.2%. The TiO 2 material exhibits better selectivity for NO 2 than for other gases (NH 3 , CO 2 , CO, H 2 , H 2 S, and SO 2 ). The results of this study show that the RT TiO 2 gas sensor with a TSV structure is stable, reversible, and exhibits good selectivity for NO 2 gas.

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Section: Resultsmentioning

confidence: 94%

Room-Temperature TiO₂ Gas Sensor with Conical-TSV Using a Thermal Oxidation Process

Hou,

Lin,

Hsueh

2023

ACS Appl. Electron. Mater.

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“…Therefore, the purpose of this work is to gain a deep insight into the gas-sensitive properties of the ALD-TiO 2 thin films under O 2 exposure and to explain them by proposing a theoretical model. [32] p-TiO 2 70 NO 10 RT 1.244 [33] P3HT/ZnO NWs -NH 3 5 RT 1.35 [34] In Table 1, c g is the gas concentration; T is the operating temperature; S is the response; CNT is the carbon nanotubes; QDs is the quantum dots; IGZO is the indium gallium zinc oxide; NSs is the nanospheres; NShs is the nanosheets; P3HT is the poly(3-hexylthiophene); NWs is the nanowires; and RT is the room temperature.…”

Section: Introductionmentioning

confidence: 99%

High Oxygen Sensitivity of TiO2 Thin Films Deposited by ALD

Almaev,

Yakovlev,

Almaev

et al. 2023

Micromachines

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The gas sensitivity and structural properties of TiO2 thin films deposited by plasma-enhanced atomic layer deposition (ALD) were examined in detail. The TiO2 thin films are deposited using Tetrakis(dimethylamido)titanium(IV) and oxygen plasma at 300 °C on SiO2 substrates followed by annealing at temperatures of 800 °C. Gas sensitivity under exposure to O2 within the temperature range from 30 °C to 700 °C was studied. The ALD-deposited TiO2 thin films demonstrated high responses to O2 in the dynamic range from 0.1 to 100 vol. % and low concentrations of H2, NO2. The ALD deposition allowed the enhancement of sensitivity of TiO2 thin films to gases. The greatest response of TiO2 thin films to O2 was observed at a temperature of 500 °C and was 41.5 arb. un. under exposure to 10 vol. % of O2. The responses of TiO2 thin films to 0.1 vol. % of H2 and 7 × 10–4 vol. % of NO2 at a temperature of 500 °C were 10.49 arb. un. and 10.79 arb. un., correspondingly. The resistance of the films increased due to the chemisorption of oxygen molecules on their surface that decreased the thickness of the conduction channel between the metal contacts. It was suggested that there are two types of adsorption centers on the TiO2 thin films surface: oxygen is chemisorbed in the form of O2– on the first one and O– on the second one.

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“…The application of TSVs in the IC field can reduce the size of devices, improve signal transmission, and can even address the manufacturing challenges of large chips. In the MEMS field, there are also advantages of TSVs in vacuum packaging for inertial sensors including gyroscopes and accelerometers [ 4 ], in 3D stacking of sensors and driver circuits to enable high performance, as well as miniaturization of devices [ 5 ]. TSVs can also reduce substrate bonding difficulties while keeping the bonding strength, and they can increase the density of electrodes.…”

Section: Introductionmentioning

confidence: 99%

Process Optimization and Performance Evaluation of TSV Arrays for High Voltage Application

Feng

Zeng

et al. 2022

Micromachines

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In order to obtain high-quality through-silicon via (TSV) arrays for high voltage applications, we optimized the fabrication processes of the Si holes, evaluated the dielectric layers, carried out hole filling by Cu plating, and detected the final structure and electric properties of the TSVs. The Si through-hole array was fabricated in an 8-inch Si substrate as follows: First, a blind Si hole array was formed by the Si deep reactive etching (DRIE) technique using the Bosch process, but with the largest width of the top scallops reduced to 540 nm and the largest notch elimidiameternated by backside grinding, which also opens the bottom ends of the Si blind holes and forms 500-μm-deep Si through holes. Then, the sidewalls of the Si holes were further smoothed by a combination of thermal oxidation and wet etching of the thermal oxide. The insulating capability of the dielectric layers was evaluated prior to metal filling by using a test kit. The metal filling of the through holes was carried out by bottom-up Cu electroplating and followed by annealing at 300 °C for 1 h to release the electroplating stress and to prevent possible large metal thermal expansion in subsequent high-temperature processes. The TSV arrays with different hole diameters and spacing were detected: no visible defects or structure peeling was found by scanning electron microscopy (SEM) observations, and no detectable interdiffusion between Cu and the dielectric layers was detected by energy dispersive X-ray (EDX) analyses. Electric tests indicated that the leakage currents between two adjacent TSVs were as low as 6.80 × 10−10 A when a DC voltage was ramped up from 0 to 350 V, and 2.86 × 10−9 A after a DC voltage was kept at 100 V for 200 s.

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A TSV-Structured Room Temperature p-Type TiO2 Nitric Oxide Gas Sensor

Cited by 6 publications

References 41 publications

Room-Temperature TiO₂ Gas Sensor with Conical-TSV Using a Thermal Oxidation Process

Room-Temperature TiO₂ Gas Sensor with Conical-TSV Using a Thermal Oxidation Process

High Oxygen Sensitivity of TiO2 Thin Films Deposited by ALD

Process Optimization and Performance Evaluation of TSV Arrays for High Voltage Application

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A TSV-Structured Room Temperature p-Type TiO2 Nitric Oxide Gas Sensor

Cited by 6 publications

References 41 publications

Room-Temperature TiO2 Gas Sensor with Conical-TSV Using a Thermal Oxidation Process

Room-Temperature TiO2 Gas Sensor with Conical-TSV Using a Thermal Oxidation Process

High Oxygen Sensitivity of TiO2 Thin Films Deposited by ALD

Process Optimization and Performance Evaluation of TSV Arrays for High Voltage Application

Contact Info

Product

Resources

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Room-Temperature TiO₂ Gas Sensor with Conical-TSV Using a Thermal Oxidation Process

Room-Temperature TiO₂ Gas Sensor with Conical-TSV Using a Thermal Oxidation Process