A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1017-Cycle Endurance

Saito, Hitoshi; Sugimachi, Tatsuya; Nakamura, Ko; Ozawa, Soichiro; Sashida, N.; Mihara, Satoru; Hikosaka, Yukinobu; Wang, Wensheng; Tomoyuki, Hori; Takai, Kazuaki; Nakazawa, M.; Noboru, Kosugi; Okuda, Masaki; Hamada, Mareomi; Kawashima, Seiichiro; Eshita, Takashi; Matsumiya, M.

doi:10.1109/imw.2015.7150275

Cited by 6 publications

(9 citation statements)

References 1 publication

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“…In addition to this H 2 barrier structure, we employed the capacitor-over-bit-line (COB) structure and optimized the transistor structure, successfully reducing the cell area by 40% even by using 180 nm design technology. Furthermore, this new FRAM realizes a much higher rewriting endurance of 10 13 and a much lower writing energy consumption than our previously commercialized FRAM 12) with an operating voltage of 1.8 V. the memories used in edge devices to operate with low writing energy consumption and high reliability because they need to work with an unstable low power supply. FRAM is suitable for various edge devices because of its aforementioned excellent electric properties and reliability.…”

Section: History Of Fram Development In Fujitsumentioning

confidence: 95%

Development of highly reliable ferroelectric random access memory and its Internet of Things applications

Eshita

Wang

Nomura

et al. 2018

Jpn. J. Appl. Phys.

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Ferroelectric random access memory (FRAM) has been commercialized for about 20 years and its reliability has been well proven all over the world. In the recent Internet of Things (IoT) era, it also plays important roles to particularly in edge computing because of its high writing speed, high rewriting endurance, and low writing energy consumption. We review the history of semiconductor memories using ferroelectrics and overview the progresses of the new ferroelectrics and promising ferroelectric applications in the future.

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Section: History Of Fram Development In Fujitsumentioning

confidence: 95%

Development of highly reliable ferroelectric random access memory and its Internet of Things applications

Eshita

Wang

Nomura

et al. 2018

Jpn. J. Appl. Phys.

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“…Table 1 indicates that the breakdown field E BD of PZT is greater than 1 order of magnitude higher than its coercive field E c , which explains why FeRAM using PZT has high endurance over 10 17 cycles and rarely experiences dielectric breakdown during write/read operations. 12 Conversely, the breakdown field E BD of FE-HfO 2 is close to the operating field E op ≈ 2E c . This explains why there are numerous reports of dielectric breakdown in the early operating stages of FE-HfO 2 materials.…”

Section: Introductionmentioning

confidence: 91%

“…It should be noted that the capacitor area of 1257 μm 2 in this demonstration is much larger than that of capacitors in actual FeRAM arrays. 9,12 It has been reported that the cycle-tobreakdown of FE-HfO 2 capacitors is further improved by a factor of 10 2 to 10 4 by reducing the capacitor area by 4 orders of magnitude. 41,42 This is because dielectric breakdown is caused by the formation of a conduction path, which has a lower probability of occurring in a smaller area.…”

Section: Low Operating Voltagementioning

confidence: 99%

“…Another challenge is to improve their poor breakdown tolerances. Table indicates that the breakdown field E BD of PZT is greater than 1 order of magnitude higher than its coercive field E c , which explains why FeRAM using PZT has high endurance over 10 17 cycles and rarely experiences dielectric breakdown during write/read operations . Conversely, the breakdown field E BD of FE-HfO 2 is close to the operating field E op ≈ 2 E c .…”

Section: Introductionmentioning

confidence: 97%

“…We examine the influence of the film thickness on the coercive field E c , coercive voltage V c , breakdown field E BD , and breakdown voltage V BD and discuss the physical mechanism behind the thickness dependence and how these behaviors can be exploited for memory applications. We demonstrate 4.0 nm-thick HZO ferroelectric capacitors that can stably operate at 1.2 V with a high endurance (>10 12 ) and 10 year data retention.…”

Section: Introductionmentioning

confidence: 99%

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Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory

Toprasertpong

Tahara

Hikosaka

et al. 2022

ACS Appl. Mater. Interfaces

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The comparatively high coercive field in Hf0.5Zr0.5O2 (HZO) and other HfO2-based ferroelectric thin films leads to two critical challenges for their application in embedded ferroelectric memory: high operating voltage due to a large thickness-field product and poor endurance due to the high operating field close to the breakdown field. In this study, we demonstrate that the thickness scaling of ferroelectric HZO down to 4 nm is a promising approach to overcome these challenges. As the coercive voltage scales down almost linearly with the film thickness, the operating voltage of 4 nm HZO is reduced to 0.6 V for one-shot operation and 1.2 V for stable memory operation, which is in the voltage range compatible with scaled silicon technologies. Furthermore, it is found that the breakdown field is substantially improved in thinner HZO since the breakdown mechanism is dominated by the stress voltage, not the stress field, resulting in improved cycle-to-breakdown by more than 4 orders of magnitude when thinning from 9.5 to 4 nm. We identify two concerns accompanying thickness scaling: the increase in crystallization temperature and the pinched hysteresis behavior, which can be addressed by carefully preparing temperature-thickness mapping and applying strong-field wake-up cycling, respectively. Our optimal 4 nm-thick HZO ferroelectric capacitor exhibits an operating voltage of 1.2 V with over 10 year data retention and 1012 endurance cycles at 100 kHz, which can be further improved to more than 1014 with a smaller capacitor size and higher operating frequency.

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Ferroelectric Memory

Eshita¹,

Wang²,

Hikosaka³

2023

Encyclopedia of Materials: Electronics

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A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1017-Cycle Endurance

Cited by 6 publications

References 1 publication

Development of highly reliable ferroelectric random access memory and its Internet of Things applications

Development of highly reliable ferroelectric random access memory and its Internet of Things applications

Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory

Ferroelectric Memory

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A Triple-Protection Structured COB FRAM with 1.2-V Operation and 1017-Cycle Endurance

Cited by 6 publications

References 1 publication

Development of highly reliable ferroelectric random access memory and its Internet of Things applications

Development of highly reliable ferroelectric random access memory and its Internet of Things applications

Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory

Ferroelectric Memory

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Product

Resources

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Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf_0.5Zr_0.5O₂ Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 nm for Embedded Ferroelectric Memory