A triple-band voltage-controlled oscillator with a triple-resonance resonator

Jang, Sheng‐Lyang; Liu, Yi-You; Juang, Miin‐Horng

doi:10.1016/j.mejo.2018.11.001

Cited by 3 publications

(3 citation statements)

References 18 publications

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“…Fig. 4(c) shows simulated oscillation frequency fosc of the pre-layout divide-by-2 ILFD, it shows frequency tuning hysteresis [11], [12], which is supported by the experimental data. The frequency-band transition voltage VG is lower than the opposite case while VG is tuned from high value to low value because the average capacitance is smaller at higher VG.…”

Section: Ii-a Circuit Design Of the 5-l 2:1 Ilfdsupporting

confidence: 64%

“…At VDD=1.1 V, VG=0.6 V, Vinj=1.65 V, the simulated locking range at Pinj=-15 dBm is from 4.5 GHz to 9.0 GHz, which is divided to three regions. The high-band is from 7.7 GHz to 9.0 GHz, the low-band is from 4.5 GHz to 6.4 GHz, and in between the above regions, the ILFD is locked to the input signal but the Oscillation frequency fosc is a function of VG and Vinj and the tuning range shows the hysteresis effect [11], [12], where the oscillation frequency depends on the direction of bias tuning direction. This is also an evidence that the ILFD uses a multi-resonance resonator.…”

Section: Ii-a Circuit Design Of the 5-l 2:1 Ilfdmentioning

confidence: 99%

“…At low RF injection power, the two ILFDs show two measured non-overlapped locking ranges, a property of dual-the gate with bias-controlled varactor. To confirm that the ILFDs have two resonant frequencies, the gate bias of the capacitive cross-coupled FETs is used to change the ILFD oscillation frequency and the free-running oscillation frequency shows the sharp transition in frequency tuning effect and frequency tuning hysteresis [11], [12], which is an effect of dualresonance resonator with bias-controlled varactor. At injection power of 0 dBm, the designed 5-L ÷2ILFD has one-band locking range from 2.18 GHz to 8.25 GHz.…”

Section: Introductionmentioning

confidence: 99%

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2:1 Injection-Locked Frequency Dividers Using Multi-Resonance Spiral-Inductor Resonator

2020

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This paper describes two low-power and wide locking range capacitive cross-coupled divideby-2 injection-locked frequency dividers (ILFDs) implemented in TSMC standard 0.18 μm processes. The ILFDs are based on a differential VCO with one direct injection MOSFET for coupling the external signal to the spiral-inductor resonator. The first/second ILFD uses five/three on-chip inductors in series with parasitic varactors as a multi-resonance resonator. Three measured features are identified. The ILFDs have two non-overlapped locking ranges at low input power, they have two free-running oscillation frequency bands, and the frequency tuning versus gate bias of cross-coupled transistors shows the frequency tuning hysteresis. The power consumption of the 5-L ILFD core is 5.43 mW and the locking range is 6.07 GHz (116.395%) from 2.18 to 8.25 GHz at injection power Pinj=0 dBm. At the supply voltage of 1.1 V, the divider's free-running oscillation frequency is 3.13 GHz. The die area of the 2 nd chip is 0.865×0.872 mm 2 . The locking range at low input power is larger for the 5-L resonator ILFD.INDEX TERMS varactor-less divide-by-2 injection-locked frequency divider, frequency tuning hysteresis, distributed resonator, tunable resonator.

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Section: Ii-a Circuit Design Of the 5-l 2:1 Ilfdsupporting

confidence: 64%

Section: Ii-a Circuit Design Of the 5-l 2:1 Ilfdmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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2:1 Injection-Locked Frequency Dividers Using Multi-Resonance Spiral-Inductor Resonator

2020

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WITHDRAWN: Implementation of 40 GHz high-resolution set based VCRO for ISM band applications

Ajitha¹,

Reddy

Telagam

2020

Materials Today: Proceedings

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Nonlinear Vibration Control for Nanobeam with Time Delay by Field Effect Transistor Sensing

Liu

Jiang

et al. 2021

Int. J. Str. Stab. Dyn.

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A vibration control signal sensing method is proposed utilizing the grid electrode displacement sensitive effect of field-effect transistors. The signal sensing method is applied to nonlinear resonance delay control of a nanobeam that is used as the core component of nano–microdevices. The nonlinear vibration dynamical model of the nanobeam based on the field-effect tube sensing is established and the differential equation of motion with time delay control is presented. The amplitude frequency response equation and phase frequency response equation of the nanobeam are obtained by analyzing the first-order approximate solution of the primary and superharmonic vibration of the nonlinear equation with multi-scale method. The vibration feedback gain and time delay can affect the vibration amplitude and nonlinear behavior of the nanobeam. The nonlinear vibration of the nanobeam can be adjusted and effectively controlled by selecting appropriate feedback gains and time delays.

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A triple-band voltage-controlled oscillator with a triple-resonance resonator

Cited by 3 publications

References 18 publications

2:1 Injection-Locked Frequency Dividers Using Multi-Resonance Spiral-Inductor Resonator

2:1 Injection-Locked Frequency Dividers Using Multi-Resonance Spiral-Inductor Resonator

WITHDRAWN: Implementation of 40 GHz high-resolution set based VCRO for ISM band applications

Nonlinear Vibration Control for Nanobeam with Time Delay by Field Effect Transistor Sensing

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