A trench beside field limiting rings terminal for improved 4H-SiC junction barrier Schottky diodes: Proposal and investigation

Ye, Xiaofeng; Ke, Huihuang; Wei, Shubo; Weng, Hongjin; Wang, Xinwei; Wong, Shen Yuong; Yang, Weifeng

doi:10.1016/j.microrel.2024.115459

Microelectronics Reliability

2024

DOI: 10.1016/j.microrel.2024.115459

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A trench beside field limiting rings terminal for improved 4H-SiC junction barrier Schottky diodes: Proposal and investigation

Xiaofeng Ye,

Huihuang Ke,

Shubo Wei

et al.

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A trench beside field limiting rings terminal for improved 4H-SiC junction barrier Schottky diodes: Proposal and investigation

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References 16 publications

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