A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT

Krishna, M.; Tripathi, Awneesh; Madhusoodhanan, Sachin; Kadavelugu, Arun; Patel, Dhaval; Hazra, Samir; Hatua, Kamalesh; Bhattacharya, Subhashish

doi:10.1109/mpel.2015.2449271

Cited by 101 publications

(35 citation statements)

References 25 publications

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“…Modular architectures consist of several cells rated for low voltage or low current, which are used as building blocks for the entire system. In contrast to this, a non-modular system is based on a single power converter, usually taking advantage of high-voltage wide-bandgap semiconductors [17], [18]. To handle the MV level involved in the power converter, special devices with high voltage capability, such as 10kV SiC Mosfet [18] or 15 kV SiC Mosfet [17], need to be employed.…”

Section: From Sst To Stmentioning

confidence: 99%

“…In contrast to this, a non-modular system is based on a single power converter, usually taking advantage of high-voltage wide-bandgap semiconductors [17], [18]. To handle the MV level involved in the power converter, special devices with high voltage capability, such as 10kV SiC Mosfet [18] or 15 kV SiC Mosfet [17], need to be employed. Since these devices are still not available on the market (only for the research purpose), there is no available product using this technology.…”

Section: From Sst To Stmentioning

confidence: 99%

See 1 more Smart Citation

Power Routing in Modular Smart Transformers: Active Thermal Control Through Uneven Loading of Cells

Liserre

Andresen

Costa

et al. 2016

EEE Ind. Electron. Mag.

105

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Section: From Sst To Stmentioning

confidence: 99%

Section: From Sst To Stmentioning

confidence: 99%

Power Routing in Modular Smart Transformers: Active Thermal Control Through Uneven Loading of Cells

Liserre

Andresen

Costa

et al. 2016

EEE Ind. Electron. Mag.

105

View full text Add to dashboard Cite

“…Modular architectures consist of several cells rated for low voltage or low current, which are used as building blocks for the entire system. In contrast to this, a non-modular system is based on a single power converter, usually taking advantage of high-voltage wide-bandgap semiconductors [12]. To handle the MV level involved in the power converter, special devices with high voltage capability, such as 15 kV SiC Mosfet [12], need to be employed.…”

Section: From Sst To Stmentioning

confidence: 99%

“…In contrast to this, a non-modular system is based on a single power converter, usually taking advantage of high-voltage wide-bandgap semiconductors [12]. To handle the MV level involved in the power converter, special devices with high voltage capability, such as 15 kV SiC Mosfet [12], need to be employed. Since these devices are still not available on the market (only for the research purpose), there is no available product using this technology.…”

Section: From Sst To Stmentioning

confidence: 99%

Multi-frequency power routing for cascaded H-bridge inverters in smart transformer application

Andresen

Buticchi

et al. 2016

2016 IEEE Energy Conversion Congress and Exposition (ECCE)

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Abstract-The smart transformer is a solid state transformer with advanced control functionalities that can efficiently manage a low-voltage micro-grid by also supporting the medium-voltage grid. Cascaded H-bridge (CHB) converters proved to be a suitable option to realize the MV stage of the smart transformer due to their modularity and multi-level output. Normally the power is equally split among the CHB cells, however, in order to delay failures of the system, certain cells can be unloaded if premature deterioration is detected. In this work, multi-frequency power transfer is used to control the power processed by the dc/dc converters that supply the dc link of the CHB. The potential is analyzed analytically and validated experimentally.

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“…Along with the development of semiconductor technology, new Wide Band Gap (WBG) semiconductor devices such as SiC devices have gradually come into view [10][11][12][13][14]. SiC devices enjoy a higher bandgap energy, a higher critical electric field, a higher saturation velocity, and superior thermal conductivity directly in comparison with Si devices, which means SiC devices have lower switching loss and no reverse recovery.…”

Section: Introductionmentioning

confidence: 99%

A High-Power-Density Single-Phase Rectifier Based on Three-Level Neutral-Point Clamped Circuits

et al. 2017

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A single-phase three-level converter is suitable for medium-power applications, with an interface voltage that is higher than that of a traditional two-level configuration. The three-level neutral-point clamped converter is adopted using four switches in each bridge arm, which, compared to a two-level rectifier, leads to less voltage stress, a lower switching frequency, and switching loss on switches. The transient current control strategy is designed to control the active power. The single-phase space vector pulse width modulation (SVPWM) with a voltage balance strategy is designed to solve the neutral point voltage fluctuation problem and keep the dc-link voltage stable. A 1.3 kW high-power-density prototype based on SiC MOSFET was built and tested. The experimental results verified the high performance of steady-state and dynamic responses.

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A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT

Cited by 101 publications

References 25 publications

Power Routing in Modular Smart Transformers: Active Thermal Control Through Uneven Loading of Cells

Power Routing in Modular Smart Transformers: Active Thermal Control Through Uneven Loading of Cells

Multi-frequency power routing for cascaded H-bridge inverters in smart transformer application

A High-Power-Density Single-Phase Rectifier Based on Three-Level Neutral-Point Clamped Circuits

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