2015
DOI: 10.1109/mpel.2015.2449271
|View full text |Cite
|
Sign up to set email alerts
|

A Transformerless Intelligent Power Substation: A three-phase SST enabled by a 15-kV SiC IGBT

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

0
35
0

Year Published

2016
2016
2022
2022

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 101 publications
(35 citation statements)
references
References 25 publications
0
35
0
Order By: Relevance
“…Modular architectures consist of several cells rated for low voltage or low current, which are used as building blocks for the entire system. In contrast to this, a non-modular system is based on a single power converter, usually taking advantage of high-voltage wide-bandgap semiconductors [17], [18]. To handle the MV level involved in the power converter, special devices with high voltage capability, such as 10kV SiC Mosfet [18] or 15 kV SiC Mosfet [17], need to be employed.…”
Section: From Sst To Stmentioning
confidence: 99%
See 1 more Smart Citation
“…Modular architectures consist of several cells rated for low voltage or low current, which are used as building blocks for the entire system. In contrast to this, a non-modular system is based on a single power converter, usually taking advantage of high-voltage wide-bandgap semiconductors [17], [18]. To handle the MV level involved in the power converter, special devices with high voltage capability, such as 10kV SiC Mosfet [18] or 15 kV SiC Mosfet [17], need to be employed.…”
Section: From Sst To Stmentioning
confidence: 99%
“…In contrast to this, a non-modular system is based on a single power converter, usually taking advantage of high-voltage wide-bandgap semiconductors [17], [18]. To handle the MV level involved in the power converter, special devices with high voltage capability, such as 10kV SiC Mosfet [18] or 15 kV SiC Mosfet [17], need to be employed. Since these devices are still not available on the market (only for the research purpose), there is no available product using this technology.…”
Section: From Sst To Stmentioning
confidence: 99%
“…Modular architectures consist of several cells rated for low voltage or low current, which are used as building blocks for the entire system. In contrast to this, a non-modular system is based on a single power converter, usually taking advantage of high-voltage wide-bandgap semiconductors [12]. To handle the MV level involved in the power converter, special devices with high voltage capability, such as 15 kV SiC Mosfet [12], need to be employed.…”
Section: From Sst To Stmentioning
confidence: 99%
“…In contrast to this, a non-modular system is based on a single power converter, usually taking advantage of high-voltage wide-bandgap semiconductors [12]. To handle the MV level involved in the power converter, special devices with high voltage capability, such as 15 kV SiC Mosfet [12], need to be employed. Since these devices are still not available on the market (only for the research purpose), there is no available product using this technology.…”
Section: From Sst To Stmentioning
confidence: 99%
“…Along with the development of semiconductor technology, new Wide Band Gap (WBG) semiconductor devices such as SiC devices have gradually come into view [10][11][12][13][14]. SiC devices enjoy a higher bandgap energy, a higher critical electric field, a higher saturation velocity, and superior thermal conductivity directly in comparison with Si devices, which means SiC devices have lower switching loss and no reverse recovery.…”
Section: Introductionmentioning
confidence: 99%