A Thulium-Silicon Hybrid Microdisk Laser

Kiani, Khadijeh Miarabbas; Frankis, Henry C.; Naraine, Cameron M.; Bonneville, Dawson B.; Knights, Andrew P.; Bradley, Jonathan D. B.

doi:10.1364/iprsn.2021.jth3a.2

Cited by 5 publications

(9 citation statements)

References 5 publications

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“…More recently, RE‐doped thin film deposition at RT has also been reported. [ 24 ] Last, in comparison with III–V gain material, some RE‐doped gain media have higher thermal stability and have been demonstrated for high‐temperature operation. [ 178 ]…”

Section: Rare‐earth‐doped Lasers On Siliconmentioning

confidence: 99%

“…Apart from Al 2 O 3 as a host material for RE dopant, in 2021, Kiani et al. [ 24,169 ] demonstrated Tm: TeO 2 thin film directly on Si and Si 3 N 4 waveguide for lasing around 1.9 µm. The laser devices have microdisk and microring cavities with a diameter of 40 and 600 µm on Si and Si 3 N 4 waveguides, respectively.…”

Section: Rare‐earth‐doped Lasers On Siliconmentioning

confidence: 99%

“…The schematic of Tm: TeO 2 microdisk laser on Si waveguide from ref. [24] is shown in Figure (a), with an energy‐level diagram of Tm 3+ included as inset. The schematic of the device cross section and the calculated transverse‐electric (TE) fundamental mode profile within microdisk are illustrated in Figure 13(b) and 13(c), respectively.…”

Section: Rare‐earth‐doped Lasers On Siliconmentioning

confidence: 99%

“…(a–e) Adapted with permission. [ 24 ] Licensed under a Creative Commons Attribution 4.0 International License, Copyright 2021, The Authors. f) Cross section of laser based on Tm:TeO 2 gain film deposited on top of Si 3 N 4 waveguide.…”

Section: Rare‐earth‐doped Lasers On Siliconmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Chen

et al. 2022

Advanced Optical Materials

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including high refractive index contrast with its oxide material, low loss at communication wavelength regime, and significant thermo-optic coefficient for tuning. Contributed by these advantages, various photonic components have been demonstrated on integrated Si photonics platform, including mode couplers, [3][4][5][6] tunable filters, [7][8][9][10] and optical modulators. [11][12][13][14] However, Si itself is an indirect bandgap material, which limits its light emission efficiency. Laser sources on Si remain to be the challenging component for photonics integration. The requirements of an integrated laser source not only cover laser performance parameters such as optical power, threshold, pumping scheme, and stability, but also low-cost and high-volume production. Researchers are trying to come up with different ways to integrate lasers on Si. The most common way is to integrate III-V lasers on Si photonics platform, through bonding integration or direct growth approach. Alternatively, group IV materials such as germanium (Ge) and germanium tin (GeSn) alloy-based lasers show promise, with significant research progress in the past decade. Raman effect has also been explored to demonstrate lasers on Si. Such kind of laser enables lasing from the Si material itself and has drawn a lot of interest in the research community. Also, rare earth (RE) elements can be doped within photonics layer to make lasers on Si, which is similar to the idea of RE-doped optical fiber laser. RE-doped laser has the advantage of low noise and high thermal stability. Comprehensive reviews on Si-integrated lasers were published more than 6 years ago. [15,16] In the meanwhile, to the best of our knowledge, the review for the most recent progress on Siintegrated lasers covering the above-mentioned approaches is still lacking.In this review, we have summarized the recent development progress of lasers integrated on Si in the past two decades, with the focus on the wavelength regimes for communication. These lasers are categorized based on their gain media, including III-V semiconductor laser, Ge/GeSn laser, Si-based Raman laser, and RE-doped laser on Si. For III-V laser, different integration approaches are discussed, covering flip-chip integration, transfer printing integration, hybrid bonding, and direct growth method. The review is organized in the following way: it starts from background information as presented in Section 1. III-V laser, Ge/GeSn laser, Raman laser, and RE-doped laser

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Section: Rare‐earth‐doped Lasers On Siliconmentioning

confidence: 99%

Section: Rare‐earth‐doped Lasers On Siliconmentioning

confidence: 99%

Section: Rare‐earth‐doped Lasers On Siliconmentioning

confidence: 99%

Section: Rare‐earth‐doped Lasers On Siliconmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Chen

et al. 2022

Advanced Optical Materials

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Subwavelength Grating Metamaterial Waveguides and Ring Resonators on a Silicon Nitride Platform

Naraine

Westwood‐Bachman

Horvath

et al. 2022

Laser & Photonics Reviews

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Subwavelength grating (SWG) metamaterial waveguides and ring resonators on a silicon nitride platform are proposed and demonstrated. The SWG waveguide is engineered such that a large overlap of 53% of the Bloch mode with the top cladding material is achieved, demonstrating excellent potential for applications in evanescent field sensing and light amplification. The devices, which have critical dimensions greater than 100 nm, are fabricated using a commercial rapid turn-around silicon nitride prototyping foundry process using electron beam lithography. Experimental characterization of the fabricated device reveals excellent ring resonator internal quality factor (2.11 × 10 5 ) and low propagation loss (≈1.5 dB cm −1 ) in the C-band, a significant improvement of both parameters compared to silicon-based SWG ring resonators. These results demonstrate the promising prospects of SWG metamaterial structures for silicon nitride based photonic integrated circuits. IntroductionSilicon photonics (SiP) has become a leading integrated photonics technology by leveraging existing microelectronics manufacturing processes and infrastructure to produce compact, scalable,

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On-chip hybrid erbium-doped tellurium oxide–silicon nitride distributed Bragg reflector lasers

Segat Frare,

Torab Ahmadi,

Hashemi

et al. 2023

Appl. Phys. B

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We demonstrate integrated on-chip erbium-doped tellurite (TeO 2 :Er 3+ ) waveguide lasers fabricated on a wafer-scale silicon nitride platform. A 0.352-µm-thick TeO 2 :Er 3+ coating was deposited as an active medium on 0.2-µm-thick, 1.2-and 1.6-µm-wide, and 22-mm-long silicon nitride waveguides with sidewall-patterned asymmetrical distributed Bragg re ector cavities. The lasers yield e ciencies between 0.06 and 0.36%, lasing threshold ranging from 13 to 26 mW, and emission within the C-band (1530-1565 nm). These results establish new opportunities for this hybrid tellurite glass-silicon nitride platform, such as the cointegration of passive components and light sources in the telecom window, and provide the foundation for the development of e cient, compact, and high-output-power on-chip erbium-doped tellurite waveguide lasers.

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A Thulium-Silicon Hybrid Microdisk Laser

Abstract: In this work, we present on optical gain and lasing in an ultra-compact thulium-silicon hybrid microdisk resonator emits around 1.9 µm with an internal slope efficiency of 60% and > 1 mW on-chip output power.

Cited by 5 publications

References 5 publications

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

Subwavelength Grating Metamaterial Waveguides and Ring Resonators on a Silicon Nitride Platform

On-chip hybrid erbium-doped tellurium oxide–silicon nitride distributed Bragg reflector lasers

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