A three-electrode distributed Bragg reflector laser with 22 nm wavelength tuning range

Öberg, M.; Nilsson, S.; Klinga, T.; Ojala, P.

doi:10.1109/68.82092

Cited by 52 publications

(12 citation statements)

References 6 publications

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“…The thermal tuning scheme in this device did not require on-chip tuning resistors as in previously reported methods [9,10] . Therefore, because of the large reverse current required on those resistors, the fabrication complexities were reduced and device damage was prevented.…”

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confidence: 84%

Digital wavelength switching by thermal and carrier injection ef fects in V-coupled cavity semiconductor laser

Jin

Wang

2012

中国光学快报

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Consecutive wavelength switching characteristics of a simple, compact, and digitally wavelength-switchable laser based on V-coupled cavities are reported. Wavelength switching through thermal and carrier injection effects is examined. Without using band gap engineering for the tuning section, 26-and 9-channel wavelength switching schemes are achieved via thermal and carrier injection effects, respectively. The performances of these two tuning schemes are then compared.OCIS A wide wavelength tuning range is an important parameter for semiconductor lasers in advanced wavelengthdivision multiplexing (WDM) systems. As the WDM technology extends towards metro and access networks, cost reduction and operational simplicity become increasingly important. Unlike tunable lasers based on Bragg gratings [1,2] or microelectromechanical system switches [3] , a recently proposed discrete wavelengthswitchable V-coupled cavity laser does not require complex gratings, multiple epitaxial growths, or complex tuning algorithms [4] while providing a wide wavelength tuning range and an excellent side-mode-suppression ratio (SMSR) near 40 dB [5] . In this letter, the experimental results of the wavelength switching characteristics of the V-coupled cavity laser under thermal tuning are reported under a carrier injection scheme. We show that a maximum discrete 26-channel wavelength switching scheme with 100-GHz channel spacing and a SMSR of approximately 37 dB can be achieved using thermal effects via single-electrode control. Meanwhile, through carrier injection tuning, a nine-channel switching scheme with the same 100-GHz spacing and SMSR of approximately 32 dB was achieved without using any band gap engineering for the tuning section. With the potentially higher switching speed provided by the carrier injection, the V-coupled cavity laser can be used in advanced optical networks where the wavelength switching speed is crucial.The V-coupled cavity laser was composed of a reflective 2 × 2 half-wave coupler and two waveguides with slightly different lengths. The etched facet version of the device is shown in Fig. 1(a). Three deep-etched facets define the reflecting mirror of the coupler and the other ends of the two resonant cavities. The fixed gain cavity (also referred to as short cavity) was designed to be 466-µm long so that its resonance frequency interval matches the 100-GHz spacing of the International Telecommunication Union operating frequency grid. As shown in Fig. 1(b), the channel selector cavity (long cavity) has a slightly different lengths (5%-10% length difference with respect to the fixed gain cavity) so that the Vernier effect can be used to increase the wavelength switching range. The half-wave coupler where the crosscoupling coefficient has a relative phase of π with respect to the bar-coupling coefficient is essential for achieving high SMSRs [6] . As shown in Ref.[4], the V-coupler has optimal coupling coefficients in amplitude and phase at the same time. Thus, its performance is superior to that of the previously r...

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confidence: 84%

Digital wavelength switching by thermal and carrier injection ef fects in V-coupled cavity semiconductor laser

Jin

Wang

2012

中国光学快报

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“…Among these are the multisection DBR devices [19,20,21] and the TTG (Tunable Twin-Guide) laser [22,23], in both of which tuning is performed by index change in a passive region and multisection DFB lasers, in which an axially varying bias to the active region induces the wavelength tuning [24,25,26].…”

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confidence: 99%

Wavelength Tunable Laser Diodes and Their Applications

Amann¹

1995

Trends in Optical Fibre Metrology and Standards

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Single mode laser diodes with an electronically tunable wavelength are among the key components needed for advanced applications in optical communications, measurement and sensing. In particular, these devices may be used as wavelength controllable transmitters in wavelength division multiplexing or as local oscillators in optical receivers using the coherent detection technique. Furthermore, distance measurements with a high accuracy and large repetition frequency as well as threedimensional viewing are feasible using the frequency modulated continuous wave radar technique in the optical domain. Also numerous measurement techniques in optoelectronics and fiber optics can be performed by means of wavelength tunable lasers. This paper reviews the recent progress made on electronically wavelength tunable laser diodes in the InGaAsP material system at 1.5 11m wavelength. The operation principles and technological approaches of the various device concepts are presented and the laser parameters relevant for anticipated applications, such as tuning range, spectral linewidth and wavelength access, are discussed.The continuous and discontinuous tuning modes are introduced, compared and the physical limitations with respect to the maximum tuning ranges are commented on. Particular attention is paid to device handling and the effort needed for wavelength control which are most important for practical applications.

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“…The lasing wavelength A, can be tuned by adjusting the bias current to the Bragg (and phase) sections. For a similar device, as used in our experiments, a tuning range of 4 nm towards shorter wavelengths and 18 nm towards longer wavelengths has been reported [7]. The possible wavelength span for the input wavelength A, is given by the gain-bandwidth of the gain section.…”

Section: Device Description and Principle Of Operationmentioning

confidence: 99%

“…Therefore the signal bandwidth is ideally limited by the relaxation frequency of the laser which varies from [3][4][5][6][7][8][9] GHz depending on the bias conditions. By this method we have obtained penalty-free wavelength conversion over 18 nm at a bitrate of 2.5 Gb/s.…”

Section: Introduction Avelength Converters That Transform Informa-mentioning

confidence: 99%

Optical wavelength conversion over 18 nm at 2.5 Gb/s by DBR-laser

Durhuus

Pedersen

Mikkelsen

et al. 1993

IEEE Photon. Technol. Lett.

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A three-electrode distributed Bragg reflector laser with 22 nm wavelength tuning range

Cited by 52 publications

References 6 publications

Digital wavelength switching by thermal and carrier injection ef fects in V-coupled cavity semiconductor laser

Digital wavelength switching by thermal and carrier injection ef fects in V-coupled cavity semiconductor laser

Wavelength Tunable Laser Diodes and Their Applications

Optical wavelength conversion over 18 nm at 2.5 Gb/s by DBR-laser

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